86--136 6733 2386
quality Low RDS ON P Channel MOSFET Leiditech SQ2303ES Suitable for PWM and Load Switch Applications factory
quality Low RDS ON P Channel MOSFET Leiditech SQ2303ES Suitable for PWM and Load Switch Applications factory

Low RDS ON P Channel MOSFET Leiditech SQ2303ES Suitable for PWM and Load Switch Applications

Key Attributes
Model Number: SQ2303ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Input Capacitance(Ciss):
640pF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SQ2303ES
Package:
SOT-23
Product Description

Product Overview

The SQ2303ES is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is ideally suited for use as a load switch or in PWM applications. It features a VDS of -30V and ID of -5.0A at VGS=-10V, with low on-state resistance across various gate voltages, including 50m (Max) at VGS=-10V, 65m (Max) at VGS=-4.5V, and 90m (Max) at VGS=-2.5V.

Product Attributes

  • Brand: Leiditech
  • Model: SQ2303ES
  • Technology: Advanced Trench Technology
  • Channel Type: P-Channel
  • Package: SOT23
  • Mode: Enhancement Mode
  • Origin: Shanghai Leiditech Electronic Co.,Ltd

Technical Specifications

Parameter Symbol Condition Min Typ Max Units
General Description
Drain-Source Voltage VDS -30 V
ID (at VGS=-10V) ID VGS=-10V -5.0 A
RDS(ON) (at VGS=-10V) RDS(ON) VGS=-10V 50 m
RDS(ON) (at VGS=-4.5V) RDS(ON) VGS=-4.5V 65 m
RDS(ON) (at VGS=-2.5V) RDS(ON) VGS=-2.5V 90 m
Absolute Maximum Ratings (TA=25C unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Drain Current-Continuous (TC=25C) ID TC=25C -5.0 A
Drain Current-Continuous (TC=100C) ID TC=100C -3.5 A
Drain Current Pulsed IDM -20 A
Maximum Power Dissipation PD 2.1 W
Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Characteristics
Thermal Resistance junction-case RJc 1.1 /W
Thermal Resistance junction-to-Ambient RJA 60 /W
Electrical Characteristics (TJ=25 unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -30 V
Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=12V,VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250A -0.5 -0.9 -1.5 V
Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-4.0A 41 50 m
Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-3.5A 50 65 m
Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A 60 90 m
Dynamic Parameters
Input Capacitance Clss VDS=-15V,VGS=0V, F=1.0MHz 640 pF
Output Capacitance Coss 80 pF
Reverse Transfer Capacitance Crss 55 pF
Switching Parameters
Turn-on Delay Time td(on) VDS=-15V,ID=-1A, VGS=-10V, RG=3 6.5 nS
Turn-on Rise Time tr 3.5 nS
Turn-Off Delay Time td(off) 41 nS
Turn-Off Fall Time tf 9 nS
Total Gate Charge Qg VDS=-15V,ID=-4.0A, VGS=-10V 14 nC
Gate-Source Charge Qgs 1.5 nC
Gate-Drain Charge Qgd 1.6 nC
Diode Forward Voltage VSD VGS=0V,ISD=-1A 0.72 1.4 V
Gate resistance Rg VGS=0V, VDS=0V, F=1MHz 7

Notes:

  • 1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
  • 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3. Essentially independent of operating temperature.

2410010404_Leiditech-SQ2303ES_C3040109.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications factory
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.