N Channel Enhancement Mode Field Effect Transistor with Fast Switching Speed Leiditech LM MMBF170 7 F
Key Attributes
Model Number:
LM-MMBF170-7-F
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
16pF@30V
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
LM-MMBF170-7-F
Package:
SOT-23
Product Description
Product Overview
The LM-MMBF170-7-F is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS.
Product Attributes
- Brand: Leiditech
- Product Type: Enhancement Mode Field Effect Transistor
- Channel Type: N-Channel
- Technology: Trench Power MV MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-source Voltage | VDS | 60 | V | |
| Drain Current | ID | TA=25 @ Steady State | 340 | mA |
| RDS(ON) | VGS=10V | <2.5 | ohm | |
| RDS(ON) | VGS=4.5V | <3.0 | ohm | |
| General Description | ||||
| Voltage controlled small signal switch | ||||
| Low input Capacitance | ||||
| Fast Switching Speed | ||||
| Low Input / Output Leakage | ||||
| Applications | ||||
| Battery operated systems | ||||
| Solid-state relays | ||||
| Direct logic-level interfaceTTL/CMOS | ||||
| Absolute Maximum Ratings | ||||
| Drain-source Voltage | VDS | (TA=25 unless otherwise noted) | 60 | V |
| Gate-source Voltage | VGS | 20 | V | |
| Drain Current | ID | TA=25 @ Steady State | 340 | mA |
| Drain Current | ID | TA=70 @ Steady State | 272 | mA |
| Pulsed Drain Current | IDM | 1.5 | A | |
| Total Power Dissipation | PD | @ TA=25 | 350 | mW |
| Thermal Resistance Junction-to-Ambient | RJA | @ Steady State | 357 | / W |
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A |
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 100 | nA |
| Gate-Body Leakage Current | IGSS2 | VGS= 10V, VDS=0V | 50 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1 - 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=-300mA | 1.2 - 2.5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=200mA | 1.3 - 3.0 | |
| Diode Forward Voltage | VSD | IS=300mA,VGS=0V | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 340 | mA | |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 16 | pF |
| Output Capacitance | Coss | pF | ||
| Reverse Transfer Capacitance | Crss | 5.5 | pF | |
| Total Gate Charge | Qg | VGS=10V,VDS=30V,ID=0.3A | 1.7 - 2.4 | nC |
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=300mA, RGEN=6 | 5 | ns |
| Turn-off Delay Time | tD(off) | 17 | ns | |
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s | 30 | ns |
Note: A. Pulse Test: Pulse Width300us,Duty cycle 2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Ordering Information
| PREFERED P/N | PACKING CODE | Marking | MINIMUM PACKAGE(pcs) | INNER BOX QUANTITY(pcs) | OUTER CARTON QUANTITY(pcs) | DELIVERY MODE |
|---|---|---|---|---|---|---|
| LM-MMBF170-7-F | F2 7002 | 3000 | 30000 | 120000 | 7 reel |
2409272300_Leiditech-LM-MMBF170-7-F_C5353608.pdf
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