N Channel Enhancement Mode MOSFET Leiditech NVTR4503N 30V for Battery Protection and Wireless Impact
Key Attributes
Model Number:
NVTR4503N
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
NVTR4503N
Package:
SOT-23
Product Description
Product Overview
The NVTR4503N is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for operation with gate voltages as low as 4.5V, making it suitable for battery protection and other switching applications. Key applications include lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: NVTR4503N
- Package Type: SOT-23
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | - | - | - | 30 | V |
| Gate-Source Voltage (VGSS) | - | - | - | 20 | V |
| Continuous Drain Current (ID@TA=25) | - | - | - | 4.2 | A |
| Continuous Drain Current (ID@TA=70) | - | - | - | 2.6 | A |
| Pulsed Drain Current (IDM) | - | - | - | 16 | A |
| Power Dissipation (PD TA = 25) | - | - | - | 1 | W |
| Thermal Resistance, Junction to Ambient (RJA) | - | - | - | 125 | /W |
| Operating and Storage Temperature Range (TJ, TSTG) | - | -55 | - | +150 | |
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=250A | 30 | 32 | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | - | - | 1.0 | A |
| Gate to Body Leakage Current (IGSS) | VDS=0V, VGS= 20V | - | - | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| Static Drain-Source on-Resistance (RDS(on)) | VGS=10V, ID=4A | - | 29 | 38 | m |
| Static Drain-Source on-Resistance (RDS(on)) | VGS=4.5V, ID=3A | - | 45 | 65 | m |
| Input Capacitance (Ciss) | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Output Capacitance (Coss) | - | - | 44 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 33 | - | pF |
| Total Gate Charge (Qg) | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 0.5 | - | nC |
| Gate-Drain(Miller) Charge (Qgd) | - | - | 0.8 | - | nC |
| Turn-on Delay Time (td(on)) | VDS=15V, ID=4A, RGEN=3, VGS=10V | - | 4 | - | ns |
| Turn-on Rise Time (tr) | - | - | 2.1 | - | ns |
| Turn-off Delay Time (td(off)) | - | - | 15 | - | ns |
| Turn-off Fall Time (tf) | - | - | 3.2 | - | ns |
| Maximum Continuous Drain to Source Diode Forward Current (IS) | - | - | - | 4 | A |
| Maximum Pulsed Drain to Source Diode Forward Current (ISM) | - | - | - | 16 | A |
| Drain to Source Diode Forward Voltage (VSD) | VGS=0V, IS=4A | - | - | 1.2 | V |
| Device Marking | Device Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|
| 3404B | SOT-23 | 180mm | 8 mm | 3000 units |
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
|---|---|---|---|
| A | - | 0.900 | 1.150 |
| A1 | - | 0.000 | 0.100 |
| A2 | - | 0.900 | 1.050 |
| b | - | 0.300 | 0.500 |
| c | - | 0.080 | 0.150 |
| D | - | 2.800 | 3.000 |
| E | - | 1.200 | 1.400 |
| E1 | - | 2.250 | 2.550 |
| e | - | 0.950TYP | - |
| e1 | - | 1.800 | 2.000 |
| L | - | 0.550REF | - |
| L1 | - | 0.300 | 0.500 |
| - | 0 | 8 |
2410121536_Leiditech-NVTR4503N_C3647048.pdf
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