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quality Motor Control Heating Power Supply Thyristor Littelfuse MCR12DCNT4G Half Wave AC Silicon Gate Device factory
quality Motor Control Heating Power Supply Thyristor Littelfuse MCR12DCNT4G Half Wave AC Silicon Gate Device factory

Motor Control Heating Power Supply Thyristor Littelfuse MCR12DCNT4G Half Wave AC Silicon Gate Device

Key Attributes
Model Number: MCR12DCNT4G
Product Custom Attributes
Holding Current (Ih):
40mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.9V
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 SCR
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-
Mfr. Part #:
MCR12DCNT4G
Package:
TO-252-2(DPAK)
Product Description

Product Overview

The MCR12DCM and MCR12DCN are surface-mount thyristors designed for half-wave AC control applications. They are suitable for motor controls, heating controls, and power supplies, or any application requiring silicon gate-controlled devices for half-wave operation. Key features include a small size, passivated die for reliability, low-level triggering and holding characteristics, and epoxy that meets UL 94 V-0. These devices also offer high ESD ratings.

Product Attributes

  • Brand: Littelfuse, Inc.
  • Certifications: UL 94 V-0 (Epoxy)
  • ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
  • Pb-Free Packages Available

Technical Specifications

Rating SymbolMCR12DCMMCR12DCNUnitDescription
VDRM, VRRM600800VPeak Repetitive Off-State Voltage (Note 1) (-40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open)
IT (RMS)12AOn-State RMS Current (180 Conduction Angles; TC = 90C)
IT(AV)7.8AAverage On-State Current (180 Conduction Angles; TC = 90C)
ITSM100APeak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C)
I2t41AsecCircuit Fusing Consideration (t = 8.3 ms)
PGM5.0WForward Peak Gate Power (Pulse Width 10 sec, TC = 90C)
PGM (AV)0.5WForward Average Gate Power (t = 8.3 msec, TC = 90C)
IGM2.0AForward Peak Gate Current (Pulse Width 1.0 sec, TC= 90C)
TJ-40 to 110COperating Junction Temperature Range
Tstg-40 to 150CStorage Temperature Range
RJC2.2C/WThermal Resistance, Junction-to-Case
RJA88C/WThermal Resistance, Junction-to-Ambient
RJA (Note 2)80C/WThermal Resistance, Junction-to-Ambient
TL260CMaximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
IDRM, IRRM0.01 (TJ = 25C), 5.0 (TJ = 125C)mAPeak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open)
dv/dt50 to 200V/sCritical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C)
VTM1.3 to 1.9VPeak Forward On-State Voltage (Note 2) (ITM = 16 A)
IGT0.5 to 1.0 (TJ = 25C), 2.0 (TJ = 40C)mAGate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 )
VGT0.3 to 1.0 (TJ = 25C), 1.5 (TJ = 40C)VGate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
tgt0.2VGate Non-Trigger Voltage (VD = 12 V, RL = 100 ) TJ = 125C
IH4.0 to 40 (TJ = 25C), 80 (TJ = 40C)mAHolding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
IL4.0 to 40 (VD = 12 V, IG = 20 A, TJ = 25C), 80 (VD = 12 V, IG = 40 A, TJ = -40C)mALatch Current

2411272159_Littelfuse-MCR12DCNT4G_C151705.pdf

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