Littelfuse IXYS DSEI30-06A Fast Recovery Epitaxial Diode with Low Switching Losses and Soft Recovery

Key Attributes
Model Number: DSEI30-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
320A
Reverse Leakage Current (Ir):
100uA@600V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
125W
Voltage - Forward(Vf@If):
1.6V@37A
Current - Rectified:
37A
Mfr. Part #:
DSEI30-06A
Package:
TO-247-2
Product Description

Product Overview

The IXYS DSEI30-06A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a planar passivated chip, very short recovery time, and extremely low switching losses, making it ideal for use as an antiparallel diode in high-frequency switching devices, anti-saturation diode, snubber diode, and free-wheeling diode in converters and motor control circuits. Its low IRM-values and soft recovery behavior contribute to high reliability circuit operation, reduced protection circuits due to low voltage peaks, low noise switching, and lower losses, allowing for operation at lower temperatures or space savings through reduced cooling. This diode is housed in an international standard JEDEC TO-247 AD package.

Product Attributes

  • Brand: IXYS
  • Package Type: JEDEC TO-247 AD
  • Chip Technology: Planar passivated
  • Material: Epoxy meets UL 94V-0

Technical Specifications

Symbol Conditions Characteristic Values (typ.) Values (max.) Units
IR VR = VRRM, TVJ = 25C Leakage Current - 100 A
IR VR = 0.8VRRM, TVJ = 25C Leakage Current - 50 A
IR VR = 0.8VRRM, TVJ = 125C Leakage Current - 7 mA
VF IF = 37 A, TVJ = 150C Forward Voltage 1.4 1.6 V
VT0 For power-loss calculations only Threshold Voltage 1.01 - V
rT For power-loss calculations only Slope Resistance 7.1 - m
RthJC TVJ = TVJM Thermal Resistance Junction to Case - 0.25 K/W
RthCH - Thermal Resistance Case to Heatsink - 0.25 K/W
trr IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C Reverse Recovery Time 35 50 ns
IRM VR = 350 V; IF = 30 A; -diF/dt = 240 A/s L < 0.05 H; TVJ = 100C Peak Reverse Current 10 11 A
IFRMS TC = 85C; rectangular, d = 0.5 RMS Forward Current - 70 A
IFAVM c VR = 0.8VRRM, duty cycle d = 0.5 Average Forward Current - 37 A
IFSM TVJ = 45C; t = 10 ms (50 Hz), sine Surge Forward Current - 300 A
IFSM TVJ = 45C; t = 8.3 ms (60 Hz), sine Surge Forward Current - 320 A
IFSM TVJ = 150C; t = 10 ms (50 Hz), sine Surge Forward Current - 260 A
IFSM TVJ = 150C; t = 8.3 ms (60 Hz), sine Surge Forward Current - 280 A
I2t TVJ = 45C; t = 10 ms (50 Hz), sine I2t - 450 A2s
I2t TVJ = 45C; t = 8.3 ms (60 Hz), sine I2t - 420 A2s
I2t TVJ = 150C; t = 10 ms (50 Hz), sine I2t - 340 A2s
I2t TVJ = 150C; t = 8.3 ms (60 Hz), sine I2t - 320 A2s
TVJ - Operating Junction Temperature - 150 C
TVJM - Max. Junction Temperature 150 - C
Tstg - Storage Temperature -40 +150 C
Ptot TC = 25C Total Power Dissipation - 125 W
Md - Mounting Torque 0.8 1.2 Nm
Weight - Weight - 6 g
VRRM - Repetitive Peak Reverse Voltage - 600 V
VRSM - Non-Repetitive Peak Reverse Voltage - 640 V
Symbol Millimeter (min.) Millimeter (max.) Inches (min.) Inches (max.)
A 4.70 5.30 0.185 0.209
A1 2.21 2.59 0.087 0.102
A2 1.50 2.49 0.059 0.098
D 20.79 21.45 0.819 0.845
E 15.48 16.24 0.610 0.640
E2 4.31 5.48 0.170 0.216
e - - 10.92 BSC 10.92 BSC
L 19.80 20.30 0.780 0.800
L1 - 4.49 - 0.177
P 3.55 3.65 0.140 0.144
Q 5.38 6.19 0.212 0.244
S - - 0.242 BSC 0.242 BSC
b 0.99 1.40 0.039 0.055
b2 1.65 2.39 0.065 0.094
b4 2.59 3.43 0.102 0.135
c 0.38 0.89 0.015 0.035
D1 13.07 - 0.515 -
D2 0.51 1.35 0.020 0.053
E1 13.45 - 0.530 -
P1 - 7.39 - 0.29

2410121916_Littelfuse-IXYS-DSEI30-06A_C424091.pdf

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