N Channel MOSFET 30V Leiditech Si2300DS Suitable for Switching Applications and Mobile Fast Charging
Key Attributes
Model Number:
Si2300DS
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
38mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Output Capacitance(Coss):
44pF
Input Capacitance(Ciss):
233pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
Si2300DS
Package:
SOT-23
Product Description
Product Overview
The Si2300DS is a 30V N-Channel Enhancement Mode MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, including lithium battery protection, wireless impact, and mobile phone fast charging.
Product Attributes
- Brand: Leiditech
- Model: Si2300DS
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | 4.2 | A | |||
| ID@TA=70 | Continuous Drain Current | 2.6 | A | |||
| IDM | Pulsed Drain Current | 16 | A | |||
| PD | Power Dissipation | TA = 25 | 1 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 125 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | 32 | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance note2 | VGS=10V, ID=4A | - | 29 | 38 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 45 | 65 | m |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Coss | Output Capacitance | - | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Qgs | Gate-Source Charge | - | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.8 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3, VGS=10V | - | 4 | - | ns |
| tr | Turn-on Rise Time | - | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | |
| tf | Turn-off Fall Time | - | 3.2 | - | ns | |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A | - | - | 1.2 | V |
| Package Dimensions (SOT-23) | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
| Ordering Information | ||||||
| Device Marking | 3404B | |||||
| Device | Si2300DS | |||||
| Package | SOT-23 | |||||
| Reel Size | 180mm | |||||
| Tape width | 8 mm | |||||
| Quantity | 3000 units | |||||
Note: 1The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2The data tested by pulsed, pulse width 300s, duty cycle 2%. 3The power dissipation is limited by 150 junction temperature. 4The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2207041730_Leiditech-Si2300DS_C3647047.pdf
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