Trench Power LV MOSFET Technology in Leiditech SE3401 P Channel Enhancement Mode Power MOSFET for Switching
Key Attributes
Model Number:
SE3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
68pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
680pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
7.2nC@10V
Mfr. Part #:
SE3401
Package:
SOT-23
Product Description
Product Overview
The SE3401 is an Enhancement Mode P-Channel Power MOSFET utilizing Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It is designed for applications such as battery protection, load switching, and power management, offering high-speed switching capabilities.
Product Attributes
- Brand: Leiditech
- Product Type: Enhancement Mode Power MOSFET
- Channel Type: P-Channel
- Technology: Trench Power LV MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-source Voltage | VDS | -30 | V | |||
| Gate-source Voltage | VGS | 12 | V | |||
| Drain Current @ TA=25 @ Steady State | ID | -4.4 | A | |||
| Drain Current @ TA=70 @ Steady State | ID | -3.5 | A | |||
| Pulsed Drain Current | IDM | -27 | A | |||
| Total Power Dissipation @ TA=25 | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient @ Steady State | RJA | 105 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V,VGS=0V,TC=25 | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -0.6 | -0.9 | -1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V, ID=-4.4A | 45.5 | 55 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-4A | 52 | 68 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -2.5V, ID=-2A | 64 | 96 | m | |
| Diode Forward Voltage | VSD | IS=-4.4A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -4.4 | A | |||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHZ | 680 | pF | ||
| Output Capacitance | Coss | 105 | ||||
| Reverse Transfer Capacitance | Crss | |||||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-4.4A | 7.2 | nC | ||
| Gate Source Charge | Qgs | 1.2 | ||||
| Gate Drain Charge | Qg d | 1.6 | ||||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDD=-15V,RL=15, ID=-1A, RGEN=2.5 | 15 | ns | ||
| Turn-on Rise Time | tr | 63 | ||||
| Turn-off Delay Time | tD(off) | 21 | ||||
| Turn-off Fall Time | tf | 12 | ||||
| Ordering Information (Example) | ||||||
| PREFERED P/N | PACKING CODE | Marking | MINIMUM PACKAGE(pcs) | INNER BOX QUANTITY(pcs) | OUTER CARTON QUANTITY(pcs) | DELIVERY MODE |
| SE3401 F2 | 3401 | 3000 | 30000 | 120000 | 7 reel | |
Note: A. Pulse Test: Pulse Width300us, Duty cycle 2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2010051434_Leiditech-SE3401_C782882.pdf
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