Low RDS ON 60V N Channel MOSFET Leiditech LMTL3N06 for Switching and Battery Protection Solutions
Key Attributes
Model Number:
LMTL3N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Input Capacitance(Ciss):
715pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
LMTL3N06
Package:
SOT-23
Product Description
Product Overview
The LMTL3N06 is a 60V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection and general switching tasks. Key features include a Drain-Source Voltage (VDS) of 60V, a continuous Drain Current (ID) of 3A at 25, and a low static drain-source on-resistance (RDS(ON)) of less than 100m at VGS=10V.
Product Attributes
- Brand: Leiditech
- Device Marking: 6003 LMTL3N06
- Package: SOT-23
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDS) | 60 | V | ||||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) @ TA=25, VGS @ 10V | 3.0 | A | ||||
| Continuous Drain Current (ID) @ TA=70, VGS @ 10V | 1.8 | A | ||||
| Pulsed Drain Current (IDM) | 9.2 | A | ||||
| Total Power Dissipation (PD) @ TA=25 | 1 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 125 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 80 | /W | ||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | V | |||
| BVDSS Temperature Coefficient (BVDSS/TJ) | Reference to 25 , ID=1mA | 0.054 | V/ | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=2A | 80 | 100 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=1A | 85 | 110 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | ||
| VGS(th) Temperature Coefficient (VGS(th)) | -4.96 | mV/ | ||||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Forward Transconductance (gfs) | VDS=5V , ID=2A | 13 | S | |||
| Total Gate Charge (Qg) (4.5V) | VDS=48V , VGS=4.5V , ID=2A | 5 | 7.0 | nC | ||
| Gate-Source Charge (Qgs) | 1.68 | 2.4 | nC | |||
| Gate-Drain Charge (Qgd) | 1.9 | 2.7 | nC | |||
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3 , ID=2A | 1.6 | 3.2 | ns | ||
| Rise Time (Tr) | 7.2 | 13 | ns | |||
| Turn-Off Delay Time (Td(off)) | 25 | 50 | ns | |||
| Fall Time (Tf) | 14.4 | 28.8 | ns | |||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 511 | 715 | pF | ||
| Output Capacitance (Coss) | 38 | 53 | pF | |||
| Reverse Transfer Capacitance (Crss) | 25 | 35 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 2.3 | A | |||
| Pulsed Source Current (ISM) | 9.2 | A | ||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| Reverse Recovery Time (trr) | IF=2A , dI/dt=100A/s , TJ=25 | 9.7 | nS | |||
| Reverse Recovery Charge (Qrr) | 5.8 | nC | ||||
| Ordering Information | ||||||
| Device Marking | 6003 LMTL3N06 | |||||
| Package | SOT-23 | |||||
| Reel Size | 3000 units | |||||
| Tape width | ||||||
| Dimensions | ||||||
| Symbol | Dimensions in Millimeters | MIN. | MAX. | |||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
Note:
- 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. The power dissipation is limited by 150 junction temperature.
- 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121618_Leiditech-LMTL3N06_C3647056.pdf
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