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quality Trench Power MV MOSFET N Channel Enhancement Mode Device Leiditech LM MMBF170 with Low Leakage Current factory
quality Trench Power MV MOSFET N Channel Enhancement Mode Device Leiditech LM MMBF170 with Low Leakage Current factory

Trench Power MV MOSFET N Channel Enhancement Mode Device Leiditech LM MMBF170 with Low Leakage Current

Key Attributes
Model Number: LM-MMBF170
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
16pF@30V
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
LM-MMBF170
Package:
SOT-23
Product Description

Product Overview

The LM-MMBF170 is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. Designed as a voltage-controlled small signal switch, it offers low input capacitance, fast switching speed, and low input/output leakage. Its key specifications include a VDS of 60V and a continuous drain current (ID) of 340mA at 25. This MOSFET is suitable for battery-operated systems, solid-state relays, and direct logic-level interfacing with TTL/CMOS.

Product Attributes

  • Brand: Leiditech
  • Model: LM-MMBF170
  • Technology: Trench Power MV MOSFET
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Package Type: SOT-23
  • Origin: Shanghai Leiditech Electronic Co.,Ltd

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Product Summary
VDS VDS 60 V
ID ID TA=25 340 mA
RDS(ON) RDS(ON) VGS=10V <2.5 ohm
RDS(ON) RDS(ON) VGS=4.5V <3.0 ohm
General Description
Technology Trench Power MV MOSFET
Function Voltage controlled small signal switch
Key Features Low Fast Low
Applications Battery operated systems, Solid-state relays, Direct logic-level interface (TTL/CMOS)
Absolute Maximum Ratings
Parameter Symbol Limit (TA=25 unless otherwise noted) Unit
Drain-source Voltage VDS 60 V
Gate-source Voltage VGS 20 V
Drain Current @ Steady State (TA=25) ID 340 mA
Drain Current @ Steady State (TA=70) ID 272 mA
Pulsed Drain Current IDM 1.5 A
Total Power Dissipation @ TA=25 PD 350 mW
Thermal Resistance Junction-to-Ambient @ Steady State RJA 357 /W
Junction and Storage Temperature Range TJ ,TSTG -55+150
Electrical Characteristics
Parameter Symbol Conditions (TJ=25 unless otherwise noted) Min Typ Max Units
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 A
Gate-Body Leakage Current IGSS1 VGS= 20V, VDS=0V 100 nA
Gate-Body Leakage Current IGSS2 VGS= 10V, VDS=0V 50 nA
Gate Threshold Voltage VGS(th) VDS= VGS, ID=250A 1 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=-300mA 1.2 2.5
Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=200mA 1.3 3.0
Diode Forward Voltage VSD IS=300mA,VGS=0V 1.2 V
Maximum Body-Diode Continuous Current IS 340 mA
Dynamic Parameters
Input Capacitance Ciss VDS=30V,VGS=0V,f=1MHZ 16 pF
Output Capacitance Coss pF
Reverse Transfer Capacitance Crss 5.5 pF
Switching Parameters
Total Gate Charge Qg VGS=10V,VDS=30V,ID=0.3A 1.7 2.4 nC
Turn-on Delay Time tD(on) VGS=10V,VDD=30V, ID=300mA, RGEN=6 5 ns
Turn-off Delay Time tD(off) 17 ns
Reverse recovery Time trr VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s 30 ns
Ordering Information
Preferred P/N Packing Code Marking Minimum Package (pcs) Inner Box Quantity (pcs) Outer Carton Quantity (pcs) Delivery Mode
LM-MMBF170 F2 7002 3000 30000 120000 7" reel

2409272300_Leiditech-LM-MMBF170_C5353607.pdf

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