50A Continuous Drain Current N Channel MOSFET Leiditech LMAK50N10 with Low Gate Charge and 100V VDS
Key Attributes
Model Number:
LMAK50N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
LMAK50N10
Package:
TO-252
Product Description
Product Overview
The LMAK50N10 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications. Its key features include a VDS of 100V, an ID of 50A, and an RDS(ON) of less than 28m at VGS=10V. Applications include battery protection, load switching, and uninterruptible power supplies.Product Attributes
- Brand: Leiditech
- Product ID: LMAK50N10
- Package: TO-252
- Type: Enhancement Mode MOSFET, N-Channel
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Symbol | Parameter | Condition | Limit | Unit |
|---|---|---|---|---|
| General Features | ||||
| VDS | Drain-Source Voltage | 100 | V | |
| ID | Drain Current-Continuous | 50 | A | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | < 28 | m |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Drain Current-Continuous | 50 | A | |
| ID (100) | Drain Current-Continuous(TC=100) | 21 | A | |
| IDM | Pulsed Drain Current | 70 | A | |
| PD | Maximum Power Dissipation | 85 | W | |
| Derating factor | 0.57 | W/ | ||
| EAS | Single pulse avalanche energy (Note 5) | 256 | mJ | |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ||
| RJC | Thermal Resistance, Junction-to-Case (Note 2) | 1.8 | /W | |
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | - | 1 A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | - | 100 nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1 - 3 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | - 24 28 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=10A | - 28 30 | m |
| gFS | Forward Transconductance | VDS=5V,ID=10A | - 15 - | S |
| Clss | Input Capacitance | VDS=25V,VGS=0V, F=1.0MHz | - 2000 - | PF |
| Coss | Output Capacitance | - 300 - | PF | |
| Crss | Reverse Transfer Capacitance | - 250 - | PF | |
| td(on) | Turn-on Delay Time | VDD=50V,RL=5, VGS=10V,RGEN=3 | - 7 - | nS |
| tr | Turn-on Rise Time | - 7 - | nS | |
| td(off) | Turn-Off Delay Time | - 29 - | nS | |
| tf | Turn-Off Fall Time | - 7 - | nS | |
| Qg | Total Gate Charge | VDS=50V,ID=10A, VGS=10V | - 39 - | nC |
| Qgs | Gate-Source Charge | - 8 - | nC | |
| Qgd | Gate-Drain Charge | - 12 - | nC | |
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=20A | - - 1.2 | V |
| IS | Diode Forward Current (Note 2) | - - 30 | A | |
| trr | Reverse Recovery Time | TJ = 25C, IF = 10A, di/dt = 100A/s(Note3) | - 32 - | nS |
| Qrr | Reverse Recovery Charge | - 53 - | nC | |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) | ||
| Ordering Information | ||||
| Product ID | Pack | Marking | Qty(PCS) | |
| LMAK50N10 | TO-252 | LMAK50N10 | 2500 | |
2410121503_Leiditech-LMAK50N10_C5128397.pdf
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