Power Management Silicon P Channel MOSFET Lewa Micro LWS6080A23 with Low RDS ON and Halogen Free SOT 223 Package
Key Attributes
Model Number:
LWS6080A23
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
RDS(on):
75mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3.9pF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
10.5nC
Mfr. Part #:
LWS6080A23
Package:
SOT-223
Product Description
Product Overview
The LWS6080A23 is a Silicon P-Channel Power MOSFET utilizing advanced SGT technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switching, hard switched and high frequency circuits, and power management. The device features low reverse transfer capacitances and is packaged in a ROHS standard and Halogen Free compliant SOT-223 package.
Product Attributes
- Brand: LW-Micro
- Origin: Shanghai, China
- Material: Silicon
- Certifications: ROHS standard, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate-to-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TA=25 C | -60 | A | ||
| Continuous Drain Current | ID | TA=100 C | -3.1 | A | ||
| Pulsed Drain Current | IDM | a1 | -20 | A | ||
| Power Dissipation | PD | TA=25 C | 3.0 | W | ||
| Maximum Temperature for Soldering | TL | 260 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | a2 | 41.6 | /W | ||
| Electrical Characteristics (TA = 25 C, unless otherwise specified) | ||||||
| Drain to Source Breakdown Voltage | VDSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -1.0 | -1.65 | -2.1 | V |
| Drain-to-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5.0A | 50.5 | m | ||
| Drain-to-Source On-Resistance | RDS(ON)2 | VGS=-4.5V, ID=-4.0A | 75 | m | ||
| Drain to Source Leakage Current | IDSS | VDS=-60V, VGS=0V | -1.0 | A | ||
| Gate to Source Leakage Current | IGSS(F) | VGS=+20V, VDS=0V | 100 | nA | ||
| Gate to Source Leakage Current | IGSS(R) | VGS=-20V, VDS=0V | -100 | nA | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1.0MHz | 100 | pF | ||
| Output Capacitance | Coss | VDS=-30V, VGS=0V, f=1.0MHz | 83 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-30V, VGS=0V, f=1.0MHz | 13 | nC | ||
| Turn-on Delay Time | td(ON) | VGS=-10V, ID=-5.0A | 4.0 | ns | ||
| Rise Time | tr | 6.0 | ns | |||
| Turn-Off Delay Time | td(OFF) | 11 | ns | |||
| Fall Time | tf | 2.9 | ns | |||
| Total Gate Charge | Qg | VGS=-10V, ID=-5.0A | 1.5 | C | ||
| Gate Drain Charge | Qgd | 1.2 | nC | |||
| Gate Source Charge | Qgs | 3.0 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS=-5.0A, VGS=0V | -1.2 | V | ||
| Diode Forward Current | ISM | -20 | A | |||
2509041621_Lewa-Micro-LWS6080A23_C20630402.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
