Littelfuse IXYS S6X8TS3RP Sensitive SCR Featuring Robust Construction and Electrical Characteristics
Key Attributes
Model Number:
S6X8TS3RP
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.7V
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
800V
Gate Trigger Voltage (Vgt):
800mV
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
S6X8TS3RP
Package:
SOT-23-3
Product Description
Product Overview
The SxX8xSx EV series sensitive SCRs are designed for high static dv/dt and low turn-off time (tq) applications. They are specifically engineered for Ground Fault Circuit Interrupter (GFCI) and Gas Ignition systems. Featuring glass-passivated junctions for long-term reliability and parametric stability, these SCRs offer surge capability up to 10 A, blocking voltage up to 800 V, and high dv/dt noise immunity. Their sensitive gate allows for direct microprocessor interfacing.
Product Attributes
- Brand: Littelfuse
- Series: SxX8xSx EV Series
- Certifications: RoHS compliant and Halogen-Free
Technical Specifications
| Characteristic | Conditions | SxX8yS1 | SxX8yS2 | Unit | Notes |
| IT(RMS) RMS On-state Current | TO-92 TC = 55 C | 0.8 | A | ||
| IT(AV) Average On-state Current | TO-92 TC = 55 C | 0.51 | A | ||
| ITSM Non-repetitive Surge Peak On-state Current | f = 50 Hz | 8 | A | Single Cycle, TJ,Initial = 25 C | |
| ITSM Non-repetitive Surge Peak On-state Current | f = 60 Hz | 10 | A | Single Cycle, TJ,Initial = 25 C | |
| I2t Value for Fusing | tp = 10 ms, f = 50 Hz | 0.32 | As | ||
| I2t Value for Fusing | tp = 8.3 ms, f = 60 Hz | 0.41 | As | ||
| di/dt Critical Rate of Rise of On-state Current | IG =10 mA, TJ = 125 C | 50 | A/s | ||
| IGM Peak Gate Current | tp = 10 s, TJ = 125 C | 1.0 | A | ||
| PG(AV) Average Gate Power Dissipation | TJ = 125 C | 0.1 | W | ||
| TSTG Storage Junction Temperature Range | - | -40 to 150 | C | ||
| TJ Operating Junction Temperature Range | - | -40 to 125 | C | ||
| Rth(JC) Thermal Resistance, junction-to-case (AC) | IT = 0.8 A(RMS) | 75 | C/W | TO-92 | |
| Rth(JC) Thermal Resistance, junction-to-case (AC) | IT = 0.8 A(RMS) | 30 | C/W | SOT-223 | |
| Rth(JC) Thermal Resistance, junction-to-case (AC) | IT = 0.8 A(RMS) | 50 | C/W | SOT-89 | |
| Rth(JA) Thermal Resistance, junction-to-ambient | IT = 0.8 A(RMS) | 150 | C/W | TO-92 | |
| Rth(JA) Thermal Resistance, junction-to-ambient | IT = 0.8 A(RMS) | 60 | C/W | SOT-223 | |
| Rth(JA) Thermal Resistance, junction-to-ambient | IT = 0.8 A(RMS) | 90 | C/W | SOT-89 | |
| IGT DC Gate Trigger Current | VD = 6 V, RL = 10 | 0.5 to 200 | 1 to 50 | A | TJ = 25 C unless otherwise specified |
| VGT DC Gate Trigger Voltage | VD = 6 V, RL = 10 | 0.8 | V | TJ = 25 C unless otherwise specified | |
| VGRM Peak Reverse Gate Voltage | IRG = 10 A | 5 | V | ||
| IH Holding Current | RGK , Initial current = 20 A | 5 | mA | TJ = 25 C unless otherwise specified | |
| (dv/dt)s Critical Rate-of-rise of Off-stage Voltage | TJ = 125 C, VD =VDRM/VRRM, RGK | 75 | V/s | ||
| tq Turn-off Time | TJ = 25 C @ 600 V, RGK | 30 | 25 | s | |
| tgt Turn-on Time | IG = 10 mA, PW T = 1.6 APK | 2 | s | ||
| VGD Gate Non-trigger Voltage | VD = VDRM, RGK = 1 J = 125 C | 0.2 | V | ||
| VTM Peak On-state Voltage | ITM = 1.6 Apk | 1.70 | V | TJ = 25 C unless otherwise specified | |
| IDRM Off-state Current, Peak Repetitive | TJ = 25 C @ VD = VDRM, RGK | 3 | A | ||
| IDRM Off-state Current, Peak Repetitive | TJ = 125 C @ VD = VDRM, RGK | 500 | A | ||
Note 1: 60 Hz AC resistive load condition, 100% conduction.
Note: x = voltage /100, y = package.
2410311311_Littelfuse-IXYS-S6X8TS3RP_C17587403.pdf
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