High Stability N Channel Enhancement Mode MOSFET Leiditech DMTH10H025LPSQ for Motor Control Systems
Key Attributes
Model Number:
DMTH10H025LPSQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.1906nF
Pd - Power Dissipation:
72W
Gate Charge(Qg):
19.8nC
Mfr. Part #:
DMTH10H025LPSQ
Package:
DFN-8(5x6)
Product Description
Product Overview
The DMTH10H025LPSQ is an N-Channel enhancement mode MOSFET utilizing advanced SGT MOSFET technology. It is engineered to deliver low RDS(on), low gate charge, fast switching speeds, and excellent avalanche characteristics. This device is specifically designed for enhanced ruggedness and is suitable for applications requiring superior stability and uniformity, such as inverters, consumer electronic power supplies, motor control, and synchronous-rectification in isolated DC applications.
Product Attributes
- Technology: SGT MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Brand: Leiditech (implied by website reference)
- Package Type: DFN5*6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain source voltage | VDS | Tj=25 unless otherwise noted | 100 | V | ||
| Gate source voltage | VGS | Tj=25 unless otherwise noted | 20 | V | ||
| Continuous drain current | ID | TC=25 | 40 | A | ||
| Pulsed drain current | ID, pulse | TC=25 | 120 | A | ||
| Power dissipation | PD | TC=25 | 72 | W | ||
| Single pulsed avalanche energy | EAS | Tj=25 | 30 | mJ | ||
| Operation and storage temperature | TstgTj | -55 | 150 | |||
| Thermal resistance, junction-case | RJC | 1.74 | /W | |||
| Thermal resistance, junction-ambient | RJA | Device mounted on 1 in 2 FR-4 board with 2oz. Copper, Ta=25 | 62 | /W | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0 V, ID=250 A | 100 | V | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250 A | 1.0 | 2.5 | V | |
| Drain-source on-state resistance | RDS(ON) | VGS=10 V, ID=8 A | 16 | 20 | m | |
| Drain-source on-state resistance | RDS(ON) | VGS=4.5 V, ID=6 A | 26 | m | ||
| Gate-source leakage current | IGSS | VDS=100 V, VGS=0 V | 1 | A | ||
| Gate-source leakage current | IGSS | VGS=20 V | -100 | nA | ||
| Drain-source leakage current | IDSS | VDS=100 V, VGS=0 V | 1 | A | ||
| Input capacitance | Ciss | VGS=0 V, VDS=50 V, =1 MHz | 1190.6 | pF | ||
| Output capacitance | Coss | VGS=0 V, VDS=50 V, =1 MHz | 194.6 | pF | ||
| Reverse transfer capacitance | Crss | VGS=0 V, VDS=50 V, =1 MHz | 4.1 | pF | ||
| Turn-on delay time | td(on) | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 17.8 | ns | ||
| Rise time | tr | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 3.9 | ns | ||
| Turn-off delay time | td(off) | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 33.5 | ns | ||
| Fall time | tf | VGS=10 V, VDS=50 V, RG=2.2 , ID=10 A | 3.2 | ns | ||
| Total gate charge | Qg | ID=8 A, VDS=50 V, VGS=10 V | 19.8 | nC | ||
| Gate-source charge | Qgs | ID=8 A, VDS=50 V, VGS=10 V | 2.4 | nC | ||
| Gate-drain charge | Qgd | ID=8 A, VDS=50 V, VGS=10 V | 5.3 | nC | ||
| Gate plateau voltage | Vplateau | ID=8 A, VDS=50 V, VGS=10 V | 3.2 | V | ||
| Diode forward current | IS | VGS<Vth | 40 | A | ||
| Pulsed source current | ISP | 120 | A | |||
| Diode forward voltage | VSD | IS=8 A, VGS=0 V | 1.3 | V | ||
| Reverse recovery time | trr | IS=8 A, di/dt=100 A/s | 50.2 | ns | ||
| Reverse recovery charge | Qrr | IS=8 A, di/dt=100 A/s | 95.1 | nC | ||
| Peak reverse recovery current | Irrm | IS=8 A, di/dt=100 A/s | 2.5 | A | ||
| Package Mechanical Data-DFN5*6-8L-JQ | ||||
|---|---|---|---|---|
| Symbol | Description | Min | Max | Unit |
| A | 1.03 | 1.17 | mm | |
| b | 0.34 | 0.48 | mm | |
| c | 0.824 | 0.0970 | mm | |
| D | 4.80 | 5.40 | mm | |
| D1 | 4.11 | 4.31 | mm | |
| D2 | 4.80 | 5.00 | mm | |
| E | 5.95 | 6.15 | mm | |
| E1 | 5.65 | 5.85 | mm | |
| E2 | 1.60 | / | mm | |
| e | 1.27 BSC | 0.05 BSC | ||
| L | 0.05 | 0.25 | mm | |
| L1 | 0.38 | 0.50 | mm | |
| L2 | 0.38 | 0.50 | mm | |
| H | 3.30 | 3.50 | mm | |
| I | / | 0.18 | mm | |
| Product ID | Pack Marking | Qty(PCS) |
|---|---|---|
| DMTH10H025LPSQ | DMTH10H025LPSQ | 5000 |
2409292333_Leiditech-DMTH10H025LPSQ_C3647070.pdf
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