P Channel Power MOSFET Load Switch PWM Applications Featuring Leiditech NVTR4502P with Low Gate Charge
Product Overview
The NVTR4502P is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON), low gate charge, and efficient operation with gate voltages as low as 2.5V. This device is ideally suited for use as a load switch or in Pulse Width Modulation (PWM) applications. Its design ensures high performance and reliability in demanding electronic systems.
Product Attributes
- Brand: Leiditech
- Technology: Advanced Trench Technology
- Package: SOT23
- Type: Enhancement Mode Power MOSFET, P-Channel
Technical Specifications
| General Description | |
|---|---|
| Model | NVTR4502P |
| Application | Load Switch, PWM Applications |
| Features | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | -30 | V |
| Continuous Drain Current (ID) at VGS=-10V (TC=25C) | -5.0 | A |
| RDS(ON) at VGS=-10V | 50 (Max) | m |
| RDS(ON) at VGS=-4.5V | 65 (Max) | m |
| RDS(ON) at VGS=-2.5V | 90 (Max) | m |
| Absolute Maximum Ratings (TA=25C unless otherwise noted) | Symbol | Maximum | Units |
|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 12 | V |
| Drain Current-Continuous (TC=25C) | ID | -5.0 | A |
| Drain Current-Continuous (TC=100C) | ID | -3.5 | A |
| Drain Current Pulsed | IDM | -20 | A |
| Maximum Power Dissipation | PD | 2.1 | W |
| Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 |
| Thermal Characteristics | Symbol | Typ | Max | Unit |
|---|---|---|---|---|
| Thermal Resistance junction-case | RJc | 1.1 | /W | |
| Thermal Resistance junction-to-Ambient | RJA | 60 | /W |
| Electrical Characteristics (TJ=25 unless otherwise noted) | Symbol | Parameter Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| STATIC PARAMETERS | BVDSS | Drain-Source Breakdown Voltage VGS=0V, ID=-250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current VDS=-30V, VGS=0V | 1 | A | |||
| IGSS | Gate-Body Leakage Current VGS=12V, VDS=0V | 100 | nA | |||
| VGS(th) | Gate Threshold Voltage VDS=VGS, ID=-250A | -0.5 | -0.9 | -1.5 | V | |
| RDS(ON) | Drain-Source On-State Resistance VGS=-10V, ID=-4.0A | 41 | 50 | m | ||
| Drain-Source On-State Resistance VGS=-4.5V, ID=-3.5A | 50 | 65 | m | |||
| Drain-Source On-State Resistance VGS=-2.5V, ID=-2.0A | 60 | 90 | m | |||
| DYNAMIC PARAMETERS | Clss | Input Capacitance VDS=-15V, VGS=0V, F=1.0MHz | 640 | pF | ||
| Coss | Output Capacitance | 80 | pF | |||
| Crss | Reverse Transfer Capacitance | 55 | pF | |||
| SWITCHING PARAMETERS | td(on) | Turn-on Delay Time VDS=-15V, ID=-1A, VGS=-10V, RG=3 | 6.5 | nS | ||
| tr | Turn-on Rise Time | 3.5 | nS | |||
| td(off) | Turn-Off Delay Time | 41 | nS | |||
| tf | Turn-Off Fall Time | 9 | nS | |||
| GATE CHARGE | Qg | Total Gate Charge VDS=-15V, ID=-4.0A, VGS=-10V | 14 | nC | ||
| Qgs | Gate-Source Charge | 1.5 | nC | |||
| Qgd | Gate-Drain Charge | 1.6 | nC | |||
| DIODE CHARACTERISTICS | VSD | Diode Forward Voltage VGS=0V, ISD=-1A | 0.72 | 1.4 | V | |
| GATE RESISTANCE | Rg | Gate resistance VGS=0V, VDS=0V, F=1MHz | 7 |
| SOT23 PACKAGE INFORMATION | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.95 TYP. | 0.037 TYP. | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.55 REF. | 0.022 REF. | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| L2 | 0.25 TYP. | 0.01 TYP. | ||
| 0 | 8 | 0 | 8 | |
2410010404_Leiditech-NVTR4502P_C3040110.pdf
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