P Channel Power MOSFET Load Switch PWM Applications Featuring Leiditech NVTR4502P with Low Gate Charge

Key Attributes
Model Number: NVTR4502P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Output Capacitance(Coss):
80pF
Input Capacitance(Ciss):
640pF
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
NVTR4502P
Package:
SOT-23
Product Description

Product Overview

The NVTR4502P is a P-Channel Power MOSFET utilizing advanced trench technology to deliver excellent RDS(ON), low gate charge, and efficient operation with gate voltages as low as 2.5V. This device is ideally suited for use as a load switch or in Pulse Width Modulation (PWM) applications. Its design ensures high performance and reliability in demanding electronic systems.

Product Attributes

  • Brand: Leiditech
  • Technology: Advanced Trench Technology
  • Package: SOT23
  • Type: Enhancement Mode Power MOSFET, P-Channel

Technical Specifications

General Description
Model NVTR4502P
Application Load Switch, PWM Applications
Features Value Unit
Drain-Source Voltage (VDS) -30 V
Continuous Drain Current (ID) at VGS=-10V (TC=25C) -5.0 A
RDS(ON) at VGS=-10V 50 (Max) m
RDS(ON) at VGS=-4.5V 65 (Max) m
RDS(ON) at VGS=-2.5V 90 (Max) m
Absolute Maximum Ratings (TA=25C unless otherwise noted) Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Drain Current-Continuous (TC=25C) ID -5.0 A
Drain Current-Continuous (TC=100C) ID -3.5 A
Drain Current Pulsed IDM -20 A
Maximum Power Dissipation PD 2.1 W
Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Characteristics Symbol Typ Max Unit
Thermal Resistance junction-case RJc 1.1 /W
Thermal Resistance junction-to-Ambient RJA 60 /W
Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250A -30 V
IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V 1 A
IGSS Gate-Body Leakage Current VGS=12V, VDS=0V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250A -0.5 -0.9 -1.5 V
RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-4.0A 41 50 m
Drain-Source On-State Resistance VGS=-4.5V, ID=-3.5A 50 65 m
Drain-Source On-State Resistance VGS=-2.5V, ID=-2.0A 60 90 m
DYNAMIC PARAMETERS Clss Input Capacitance VDS=-15V, VGS=0V, F=1.0MHz 640 pF
Coss Output Capacitance 80 pF
Crss Reverse Transfer Capacitance 55 pF
SWITCHING PARAMETERS td(on) Turn-on Delay Time VDS=-15V, ID=-1A, VGS=-10V, RG=3 6.5 nS
tr Turn-on Rise Time 3.5 nS
td(off) Turn-Off Delay Time 41 nS
tf Turn-Off Fall Time 9 nS
GATE CHARGE Qg Total Gate Charge VDS=-15V, ID=-4.0A, VGS=-10V 14 nC
Qgs Gate-Source Charge 1.5 nC
Qgd Gate-Drain Charge 1.6 nC
DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V, ISD=-1A 0.72 1.4 V
GATE RESISTANCE Rg Gate resistance VGS=0V, VDS=0V, F=1MHz 7
SOT23 PACKAGE INFORMATION
Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.95 TYP. 0.037 TYP.
e1 1.800 2.000 0.071 0.079
L 0.55 REF. 0.022 REF.
L1 0.300 0.500 0.012 0.020
L2 0.25 TYP. 0.01 TYP.
0 8 0 8

2410010404_Leiditech-NVTR4502P_C3040110.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.