Trench Power MV MOSFET 60V N Channel device LGE LGE03N06BF designed for heat dissipation and low RDS
Key Attributes
Model Number:
LGE03N06BF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Input Capacitance(Ciss):
330pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
5.1nC@10V
Mfr. Part #:
LGE03N06BF
Package:
SOT-23
Product Description
Product Overview
The LGE03N06BF is a 60V N-Channel Enhancement Mode MOSFET featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is suitable for DC-DC converters and power management functions.
Product Attributes
- Brand: LG
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Trench Power MV MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS1 | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current | IGSS2 | VGS= 12V, VDS=0V | 50 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.1 | 1.7 | 2.3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=2A | 60 | m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=1.5A | 80 | m | ||
| Diode Forward Voltage | VSD | IS=2.0A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 2.0 | A | |||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHZ | 330 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHZ | 80 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHZ | 100 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 5.1 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 1.3 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 1.7 | nC | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 13 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 51 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 19 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=30V, ID=1.5A,RL=1 RGEN=3 | 12 | ns | ||
| Total Power Dissipation | PD | @ TC=25 | 1.2 | W | ||
| Thermal Resistance | RJA | Junction-to-Ambient | 105 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | A | ||||
| Pulsed Drain Current | IDM | 12 | A |
2410121839_LGE-LGE03N06BF_C22388879.pdf
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