N Channel Enhancement Mode Power MOSFET Leiditech DMN6013LFGQ with 60V Drain Source Voltage and 20A Current
Key Attributes
Model Number:
DMN6013LFGQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.1821nF@50V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
18.4nC@10V
Mfr. Part #:
DMN6013LFGQ
Package:
DFN3x3-8L
Product Description
Product Overview
The DMN6013LFGQ is an N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a 60V drain-source voltage and a continuous drain current of up to 20A at 25C. This MOSFET is housed in a compact DFN3*3-8L package, offering efficient power dissipation and reliable performance.
Product Attributes
- Brand: Leiditech
- Model: DMN6013LFGQ
- Package Type: DFN3*3-8L
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Origin: Shanghai Leiditech Electronic Co.,Ltd
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tj=25C unless otherwise specified) | |||||
| Drain source voltage (VDS) | 60 | V | |||
| Gate source voltage (VGS) | 20 | V | |||
| Continuous drain current (ID@TA=25) | 20 | A | |||
| Continuous drain current (ID@TA=70) | 11 | A | |||
| Pulsed drain current (IDM) | 60 | A | |||
| Power dissipation (PD@TA=25) | 60 | W | |||
| Single pulsed avalanche energy (EAS) | 30 | mJ | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operation and storage temperature (Tj) | -55 | 150 | |||
| Thermal resistance, junction-case (RJC) | 2.1 | C/W | |||
| Thermal resistance, junction-ambient (RJA) 5) | 85 | C/W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | |||||
| Drain-source breakdown voltage (BVDSS) | VGS=0 V, ID=250 A | 60 | 68 | V | |
| Gate threshold voltage (VGS(th)) | VDS=VGS, ID=250 A | 1.2 | 1.5 | 2.5 | V |
| Drain-source on-state resistance (RDS(ON)) | VGS=10 V, ID=20 A | 7.5 | 10 | m | |
| Drain-source on-state resistance (RDS(ON)) | VGS=4.5 V, ID=10 A | 10 | 13 | m | |
| Gate-source leakage current (IGSS) | VGS=20 V | 100 | nA | ||
| Drain-source leakage current (IDSS) | VDS=60 V, VGS=0 V | 1 | A | ||
| Input capacitance (Ciss) | VGS=0 V, VDS=50 V, =100 kHz | 1182.1 | pF | ||
| Output capacitance (Coss) | 199.5 | pF | |||
| Reverse transfer capacitance (Crss) | 4.1 | pF | |||
| Turn-on delay time (td(on)) | VGS=10 V, VDS=50 V, RG=2 , ID=10 A | 17.9 | ns | ||
| Rise time (tr) | 4.0 | ns | |||
| Turn-off delay time (td(off)) | 34.9 | ns | |||
| Fall time (tf) | 5.5 | ns | |||
| Total gate charge (Qg) | ID=10 A, VDS=50 V, VGS=10 V | 18.4 | nC | ||
| Gate-source charge (Qgs) | 3.3 | nC | |||
| Gate-drain charge (Qgd) | 3.1 | nC | |||
| Gate plateau voltage (Vplateau) | 2.8 | V | |||
| Diode forward current (IS) | VGS<Vth | 60 | A | ||
| Pulsed source current (ISP) | 180 | ||||
| Diode forward voltage (VSD) | IS=20 A, VGS=0 V | 1.3 | V | ||
| Reverse recovery time (trr) | IS=10 A, di/dt=100 A/s | 41.8 | ns | ||
| Reverse recovery charge (Qrr) | 36.1 | nC | |||
| Peak reverse recovery current (Irrm) | 1.4 | A | |||
| Package Mechanical Data - DFN3*3-8L | |||||
| Symbol | Common | mm | Min | Nom | Max |
| A | 0.70 | 0.75 | 0.85 | ||
| A1 | / | / | 0.05 | ||
| b | 0.20 | 0.30 | 0.40 | ||
| c | 0.10 | 0.152 | 0.25 | ||
| D | 3.15 | 3.30 | 3.45 | ||
| D1 | 3.00 | 3.15 | 3.25 | ||
| D2 | 2.29 | 2.45 | 2.65 | ||
| E | 3.15 | 3.30 | 3.45 | ||
| E1 | 2.90 | 3.05 | 3.20 | ||
| E2 | 1.54 | 1.74 | 1.94 | ||
| E3 | 0.28 | 0.48 | 0.65 | ||
| E4 | 0.37 | 0.57 | 0.77 | ||
| E5 | 0.10 | 0.20 | 0.30 | ||
| e | 0.60 | 0.65 | 0.70 | ||
| K | 0.59 | 0.69 | 0.89 | ||
| L | 0.30 | 0.40 | 0.50 | ||
| L1 | 0.06 | 0.125 | 0.20 | ||
| t | 0 | 0.075 | 0.13 | ||
| 10 | 12 | 14 | |||
2410121549_Leiditech-DMN6013LFGQ_C3647080.pdf
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