Low RDS ON P Channel Super Enhancement Mode MOSFET Leiditech DMG2307LQ for Battery Protection Systems
Key Attributes
Model Number:
DMG2307LQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
74pF
Output Capacitance(Coss):
98pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
580pF
Gate Charge(Qg):
6.8nC@10V
Mfr. Part #:
DMG2307LQ
Package:
SOT-23
Product Description
Product Overview
The DMG2307LQ is a P-Channel Super Enhancement Mode MOSFET designed with Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers a VDS of -30V and an ID of 4.1A. Key features include low on-resistance at various gate-source voltages (-10V and -4.5V), making it suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Technology: Trench Power LV MOSFET
- Mode: Super Enhancement Mode
- Channel Type: P-Channel
- Manufacturer: Leiditech
- Revision Date: 01.06.2017
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Summary | ||||||
| Drain-source Voltage | VDS | -30 | V | |||
| Drain Current | ID | TA=25 @ Steady State | -4.1 | A | ||
| Drain Current | ID | TA=70 @ Steady State | -3.2 | A | ||
| RDS(ON) | RDS(ON) | VGS= -10V, ID=-4.1A | 46 | 60 | m | |
| RDS(ON) | RDS(ON) | VGS= -4.5V, ID=-3.5A | 58 | 75 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | (TA=25 unless otherwise noted) | -30 | V | ||
| Gate-source Voltage | VGS | (TA=25 unless otherwise noted) | 20 | V | ||
| Drain Current | ID | TA=25 @ Steady State | -4.1 | A | ||
| Drain Current | ID | TA=70 @ Steady State | -3.2 | A | ||
| Pulsed Drain Current | IDM | -15 | A | |||
| Total Power Dissipation | PD | @ TA=25 | 1.5 | W | ||
| Thermal Resistance Junction-to-Ambient | RJA | @ Steady State | 82 | / W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V,VGS=0V,TC=25 | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -1.0 | -1.5 | -2.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V, ID=-4.1A | 46 | 60 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-3.5A | 58 | 75 | m | |
| Diode Forward Voltage | VSD | IS=-4.1A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -4.1 | A | |||
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHZ | 580 | pF | ||
| Output Capacitance | Coss | 98 | pF | |||
| Reverse Transfer Capacitance | Crss | 74 | pF | |||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-4.1A | 6.8 | nC | ||
| Gate Source Charge | Qgs | 1.0 | nC | |||
| Gate Drain Charge | Qg d | 1.4 | nC | |||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDD=-15V, RL=15,ID=-1A, RGEN=2.5 | 14 | ns | ||
| Turn-on Rise Time | tr | 61 | ns | |||
| Turn-off Delay Time | tD(off) | 19 | ns | |||
| Turn-off Fall Time | tf | 10 | ns | |||
| Ordering Information | ||||||
| PREFERED P/N | DMG2307LQ | |||||
| MARKING | DMG2307LQ | |||||
| MINIMUM PACKAGE(pcs) | 3000 | |||||
| DELIVERY MODE | 7 reel | |||||
Note: A. Pulse Test: Pulse Width300us, Duty cycle 2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2206291815_Leiditech-DMG2307LQ_C3040116.pdf
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