Intelligent power module LINKOSEMI LKS1D5005DTC designed for high voltage BLDC and PMSM motor control
Key Attributes
Model Number:
LKS1D5005DTC
Product Custom Attributes
High-side Bias Voltage(Vbs):
12V~18V
Operating Temperature:
-40℃~+150℃
Voltage - Isolation:
-
Frequency - Switching:
20kHz
Mfr. Part #:
LKS1D5005DTC
Package:
ESOP-13
Product Description
Product Overview
The LKS1D5005DTC is a high-voltage single-phase Intelligent Power Module (IPM) integrating a high-voltage IC and high-performance MOSFETs. It is suitable for Brushless DC (BLDC) and Permanent Magnet Synchronous Motors (PMSM). The source of the low-side MOSFET can be used for current sampling. The input stage includes a Schmitt trigger and is compatible with 3.3V/5V/15V logic levels. The LKS1D5005DTC is available in an ESOP13 package.
Product Attributes
- Brand: LKS (BPS)
- Package: ESOP13
- Packaging: Tape & Reel, 2500PCS/Reel
Technical Specifications
| Parameter | Condition | Min | Typical | Max | Unit |
| Absolute Maximum Ratings (Note 1) (TA=25 unless otherwise specified) | |||||
| VCC | Control Supply Voltage (VCC-GND) | -0.3 | 20 | V | |
| VBS | High-Side Bias Voltage (VB-VS) | -0.3 | 20 | V | |
| VLIN/HIN | Input Signal Voltage (LIN/HIN-GND) | -0.3 | VCC + 0.3 | V | |
| TJ | Operating Junction Temperature | -40 | 150 | ||
| TSTG | Storage Temperature | -40 | 125 | ||
| VDSS | MOSFET Drain-Source Voltage | 500 | V | ||
| ID | MOSFET Continuous Operating Current (Note 2) | 5 (TC=25) | 3.16 (TC=100) | A | |
| PD | Max Power Dissipation per MOSFET (TC=100) | 50 | W | ||
| Rth(j-c)T | Thermal Resistance Junction-to-Top Case | 20 | /W | ||
| Rth(j-c)B | Thermal Resistance Junction-to-Bottom Case | 1 | /W | ||
| Recommended Operating Conditions (Note 3) (TA=25 unless otherwise specified) | |||||
| VPN | Power Supply Voltage (between P and N pins) | 300 | 400 | V | |
| VCC | Control Supply Voltage (VCC-GND) | 12.0 | 15.0 | 18.0 | V |
| VBS | High-Side Bias Voltage (VB-VS) | 12.0 | 15.0 | 18.0 | V |
| VLIN/HIN(ON) | Input Turn-On Voltage Threshold | 3.0 | V | ||
| VLIN/HIN(OFF) | Input Turn-Off Voltage Threshold | 0.4 | V | ||
| TDEAD | Dead Time for Shoot-Through Prevention | 1.0 | s | ||
| FPWM | PWM Switching Frequency | 20 | kHz | ||
| TC(MAX) | Maximum Case Temperature during Operation | 120 | |||
| Electrical Characteristics (Note 5) (TA=25 unless otherwise specified) | |||||
| BVDSS | MOSFET Drain-Source Breakdown Voltage | 500 | V | ||
| IDSS | MOSFET Cut-off Drain Current | 10 (VDS=500V) | A | ||
| VSD | Body Diode Forward Voltage | 1.4 (ID=-5A) | V | ||
| RDS(ON) | MOSFET On-State Resistance | 1.6 (ID=0.5A) | 1.9 (ID=0.5A) | ||
| TON | Turn-On Time | 860 (ID=5A) | ns | ||
| TOFF | Turn-Off Time | 240 (ID=5A) | ns | ||
| Irr | Charge | 95 (ID=5A) | ns | ||
| Trr | Reverse Recovery Time | 50 (ID=5A) | ns | ||
| Tf | Fall Time | 13 (ID=5A) | ns | ||
| EON | Turn-On Energy | 280 | J | ||
| EOFF | Turn-Off Energy | 15 | J | ||
| IQCC | Quiescent VCC Supply Current | 190 (VCC=15V) | 300 (VCC=15V) | A | |
| ISW | VCC Supply Current during Normal Switching | 0.6 (VCC=15V) | mA | ||
| IQB | Quiescent VBS Supply Current | 50 (VBS=15V) | 80 (VBS=15V) | A | |
| VCC_ON | VCC Normal Operation Voltage Threshold | 8.0 | 8.8 | 9.8 | V |
| VBS_ON | VBS Normal Operation Voltage Threshold | 8.0 | 8.8 | 9.8 | V |
| VCC_UVLO | VCC Under-Voltage Protection Threshold | 7.4 | 8.0 | 9.4 | V |
| VBS_UVLO | VBS Under-Voltage Protection Threshold | 7.4 | 8.0 | 9.4 | V |
| VCC_HYS | VCC Voltage Hysteresis | 0.5 | 0.8 | 1.2 | V |
| VBS_HYS | VBS Voltage Hysteresis | 0.5 | 0.8 | 1.2 | V |
| VIH | Logic High Input Voltage Threshold | 2.9 | V | ||
| VIL | Logic Low Input Voltage Threshold | 0.45 | V | ||
| DT | Built-in Dead Time for Shoot-Through Prevention | 400 | ns | ||
| VFB | Bootstrap Diode Forward Voltage | 1.4 (IF=0.2A) | V | ||
| TRRB | Bootstrap Diode Reverse Recovery Time | 40 (IF=0.5A) | ns | ||
2411271720_LINKOSEMI-LKS1D5005DTC_C42396688.pdf
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