NPN Silicon Transistor LRC LBTN880DPTUG Featuring 16 Amp Peak Collector Current and RoHS Compliance
Key Attributes
Model Number:
LBTN880DPTUG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
200nA
Pd - Power Dissipation:
1.75W
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBTN880DPTUG
Package:
TO-252
Product Description
Product Overview
The LBTN880DPTUG and S-LBTN880DPTUG are NPN Silicon Power Transistors designed for surface mount applications. They feature lead formed for plastic sleeves and are RoHS compliant and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S- prefix only)
- Device Marking: LBTN880DPTUG (N88), S-LBTN880DPTUG (N88)
- Shipping: 2500/Tape&Reel
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
| CollectorEmitter Voltage | VCEO | 80 | V | |
| CollectorBase Voltage | VCBO | 80 | V | |
| EmitterBase Voltage | VEBO | 5 | V | |
| Collector Current(DC) | IC | 8 | A | |
| Peak collector current(tp < 5 ms) | ICM | 16 | A | |
| Total Power Dissipation | PD | 1.75 | W | @ TA = 25C, mounted on minimum pad sizes |
| Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | C/W | Note 1 |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55~+150 | ||
| CollectorEmitter Breakdown Voltage (IC = 1 mA, IB = 0) | VBR(CEO) | 80 | V | |
| CollectorBase Breakdown Voltage (IC = 100A, IE = 0) | VBR(CBO) | 80 | V | |
| EmitterBase Breakdown Voltage (IE = 100A, IC = 0) | VBR(EBO) | 5 | V | |
| CollectorBase Cutoff Current (VCB=80V,IE=0 ) | ICBO | 200 | nA | Max. |
| EmitterBase CutOff Current (VEB=5V,IC=0) | IEBO | 200 | nA | Max. |
| Collector-Emitter Cutoff Current (VCE=80V,IB=0) | ICEO | 1 | A | Max. |
| DC Current Gain (VCE =1V,IC =2A) | HFE | 60 - 200 | ||
| DC Current Gain (VCE =1V,IC =4A) | HFE | 40 - | ||
| CollectorEmitter Saturation Voltage (IC =8A,IB =400mA) | VCE(sat) | 1.5 | V | Max. |
| Base-Emitter saturation voltage (IC =8A, IB =800 mA) | VBE(sat) | - | V | |
| Delay Time | td | 46.5 | ns | Pulse Test |
| Rise Time | tr | 83 | ns | Pulse Test |
| Storage Time | ts | 1573 | ns | Pulse Test |
| Fall Time | tf | 112 | ns | Pulse Test |
2212131830_LRC-LBTN880DPTUG_C5273354.pdf
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