N Channel MOSFET IXFK52N100X Featuring Avalanche Rating and Low Package Inductance for Motor Drives
Key Attributes
Model Number:
IXFK52N100X
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
52A
RDS(on):
125mΩ@10V,52A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
123pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
1.25kW
Input Capacitance(Ciss):
6.725nF@20V
Gate Charge(Qg):
245nC@10V
Mfr. Part #:
IXFK52N100X
Package:
TO-264
Product Description
Product Description
The IXFK52N100X and IXFX52N100X are N-Channel Enhancement Mode Avalanche Rated X-Class HiPerFET Power MOSFETs designed for high-power density applications. They feature low QG, avalanche rating, and low package inductance, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo controls. Their advantages include easy mounting and space savings.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by US patents)
- Certifications: Covered by multiple US patents
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | BVDSS (V) | VGS(th) (V) | IGSS (nA) | IDSS (A) | TJ (C) | TJM (C) | Tstg (C) | TL (C) | TSOLD (C) | Md (Nm/lb.in) | FC (N/lb) | Weight (g) | Package | Features | Advantages | Applications |
| IXFK52N100X / IXFX52N100X | 1000 | 52 | 125 | 1000 | 3.5 - 6.0 | 100 | 50 (TJ=125C: 5mA) | -55 ... +150 | 150 | -55 ... +150 | 300 | 260 | 1.13/10 | 20..120 /4.5..27 | TO-264P: 10, PLUS247: 6 | TO-264P, PLUS247 | International Standard Packages, Low QG, Avalanche Rated, Low Package Inductance | High Power Density, Easy to Mount, Space Savings | Switch-Mode and Resonant-Mode Power Supplies, DC-DC Converters, PFC Circuits, AC and DC Motor Drives, Robotics and Servo Controls |
Source-Drain Diode Characteristics
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| IS | VGS = 0V | 52 | A | ||
| ISM | Repetitive, Pulse Width Limited by TJM | 208 | A | ||
| VSD | IF = IS , VGS = 0V, Note 1 | 1.4 | V | ||
| trr | 260 | ns | |||
| QRM | 2.7 | C | |||
| IRM | IF = 26A, -di/dt = 100A/s | 20.8 | A |
Other Characteristics
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| gfs | VDS = 20V, ID = 0.5 ID25, Note 1 | 23 | 37 | S | |
| RGi | 0.5 | ||||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 6725 | pF | ||
| Coss | 1620 | pF | |||
| Crss | 123 | pF | |||
| Co(er) | Effective Output Capacitance | 220 | pF | ||
| Co(tr) | Energy related | 1070 | pF | ||
| td(on) | Resistive Switching Times VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External) | 34 | ns | ||
| tr | 13 | ns | |||
| td(off) | 107 | ns | |||
| tf | 9 | ns | |||
| Qg(on) | Gate Charge VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 245 | nC | ||
| Qgs | 53 | nC | |||
| Qgd | 125 | nC | |||
| RthJC | 0.10 | C/W | |||
| RthCS | 0.15 | C/W |
2411220040_Littelfuse-IXFK52N100X_C7290920.pdf
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