Compact SOT23 PNP transistor LRC LBSS5240LT1G with low saturation voltage and high current handling

Key Attributes
Model Number: LBSS5240LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
LBSS5240LT1G
Package:
SOT-23
Product Description

Product Overview

The LBSS5240LT1G is a PNP silicon transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to reduced heat generation and serves as a replacement for SOT89/SOT223 standard packaged transistors. This device is AEC-Q101 Qualified and PPAP Capable when ordered with the 'S-' prefix for automotive and other applications requiring unique site and control change requirements.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Certifications: AEC-Q101 Qualified (with 'S-' prefix)
  • Complementary NPN: LBSS4240LT1G

Technical Specifications

SymbolParameterConditionsValueUnit
MAXIMUM RATINGS
V CEOCollectorEmitter Voltage40V
V CBOCollectorBase Voltage40V
V EBOEmitterBase Voltage5.0V
I CCollector Current Continuous2A
P DPower Dissipation0.3W
T jJunction Temperature150C
T stgStorage Temperature-65 ~+150C
THERMAL CHARACTERISTICS
Rth(j-a)Thermal Resistance Junction to AmbientNote 1 (Free Air)417K/W
Rth(j-a)Thermal Resistance Junction to AmbientNote 2 (Free Air)260K/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
I CBOCollector-Base Cut-off CurrentVCB = 30 V; IE = 0100nA
I EBOEmitter-Base Cut-off CurrentVBE = 4 V; IC = 0100nA
hFEDC Current GainVCE = 2 V; IC = 100 mA300
IC = 500 mA260
IC = 1 A210
IC = 2 A100
VCEsatCollector-Emitter Saturation VoltageIC = 100 mA; IB = 1 mA100mV
IC = 500 mA; IB = 50 mA110mV
IC = 750 mA; IB = 15 mA225mV
IC = 1 A; IB = 50 mA225mV
IC = 2 A; IB = 200 mA350mV
VBE(on)Base-Emitter Turn-on VoltageVCE = 2 V; IC = 100 mA0.75V
VBEsatBase-Emitter Saturation VoltageIC = 2 A; IB = 200 mA1.1V
fTTransition FrequencyIC = 100 mA; VCE = 10 V; f = 100 MHz100MHz
CcCollector CapacitanceVCB = 10 V; IE = Ie = 0; f = 1 MHz28pF

Applications

  • Supply line switching circuits
  • Battery management applications
  • DC/DC converter applications
  • Strobe flash units
  • Heavy duty battery powered equipment (motor and lamp drivers)

Ordering Information

  • LBSS5240LT1G: 3000/Tape & Reel
  • LBSS5240LT3G: 10000/Tape & Reel
  • S-LBSS5240LT1G: Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; 3000/Tape & Reel
  • S-LBSS5240LT3G: Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; 10000/Tape & Reel

2410010232_LRC-LBSS5240LT1G_C92422.pdf

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