NPN Silicon High Voltage Transistor LRC LMBT6517LT1G SOT23 Package RoHS Compliant Electronic Component
Key Attributes
Model Number:
LMBT6517LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
350V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT6517LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT6517LT1G/LT3G series are NPN Silicon High Voltage Transistors in a SOT-23 package, designed for various electronic applications. These transistors offer high voltage capabilities and are compliant with RoHS requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Notes |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | 350 | Vdc | ||
| CollectorBase Voltage | V CBO | 350 | Vdc | ||
| EmitterBase Voltage | V EBO | 5.0 | Vdc | ||
| Base Current | I B | 250 | mAdc | ||
| Collector Current Continuous | I C | 500 | mAdc | ||
| Total Device Dissipation (FR5 Board) | PD | 225 | mW | TA = 25C, Derate above 25C 1.8 mW/C | |
| Thermal Resistance, Junction to Ambient (FR5 Board) | RJA | 556 | C/W | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25C, Derate above 25C 2.4 mW/C | |
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | 55 | +150 | C | |
| OFF CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 350 | Vdc | (I C = 1.0 mAdc ) | |
| CollectorBase Breakdown Voltage | V (BR)CBO | 350 | Vdc | (I C = 100 Adc ) | |
| EmitterBase Breakdown Voltage | V (BR)EBO | 6.0 | Vdc | (I E = 10 Adc ) | |
| Collector Cutoff Current | I CBO | 50 | nAdc | ( V CB = 250Vdc ) | |
| Emitter Cutoff Current | I EBO | 50 | nAdc | ( V EB = 5.0Vdc ) | |
| ON CHARACTERISTICS | |||||
| DC Current Gain | hFE | (V CE = 10 Vdc) | |||
| 20 | (I C = 1.0 mAdc) | ||||
| 30 | (I C = 10mAdc) | ||||
| 30 | 200 | (I C = 30 mAdc) | |||
| 20 | 200 | (I C = 50 mAdc) | |||
| 15 | (I C = 100 mAdc) | ||||
| CollectorEmitter Saturation Voltage | VCE(sat) | Vdc | |||
| 0.30 | (I C = 10mAdc, I B = 1.0mAdc) | ||||
| 0.35 | (I C = 20 mAdc, I B = 2.0 mAdc) | ||||
| 0.50 | (I C = 30 mAdc, I B = 3.0mAdc) | ||||
| 1.0 | (I C = 50 mAdc, I B = 5.0 mAdc) | ||||
| Base Emitter Saturation Voltage | VBE(sat) | Vdc | |||
| 0.75 | (I C = 10mAdc, I B = 1.0mAdc,) | ||||
| 0.85 | (I C = 20mAdc, I B = 2.0mAdc,) | ||||
| 0.90 | (I C = 30mAdc, I B = 3.0mAdc,) | ||||
| BaseEmitter On Voltage | V BE(on) | 2.0 | Vdc | (I C = 100mAdc, V CE = 10Vdc) | |
| SMALLSIGNAL CHARACTERISTICS | |||||
| Current GainBandwidth Product | f T | 40 | 200 | MHz | (V CE = 20 Vdc, I C = 10mAdc, f = 20 MHz) |
| Collector Base Capacitance | C cb | 6.0 | pF | (V CB = 20 Vdc, f = 1.0 MHz) | |
| Emitter Base Capacitance | C eb | 80 | pF | (V EB=0.5 Vdc, f = 1.0 MHz) | |
2111041830_LRC-LMBT6517LT1G_C2912033.pdf
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