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quality Single phase half wave silicon bridge rectifier LGE GBL608 designed for resistive and inductive loads factory
quality Single phase half wave silicon bridge rectifier LGE GBL608 designed for resistive and inductive loads factory

Single phase half wave silicon bridge rectifier LGE GBL608 designed for resistive and inductive loads

Key Attributes
Model Number: GBL608
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
175A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@6A
Current - Rectified:
6A
Voltage - DC Reverse(Vr):
800V
Mfr. Part #:
GBL608
Package:
GBL
Product Description

GBL6005-GBL610 Silicon Bridge Rectifiers

Ideal for printed circuit board applications, these silicon bridge rectifiers offer reliable, low-cost construction utilizing a molded plastic technique. The plastic material boasts a U/L flammability classification of 94V-O. They are designed for single-phase, half-wave, 60 Hz operation with resistive or inductive loads. For capacitive loads, derating by 20% is recommended. Features include glass passivated chip junctions.

Product Attributes

  • Brand: LG SEMI (implied by domain)
  • Material: Molded plastic (U/L flammability classification 94V-O)
  • Certifications: U/L flammability classification 94V-O

Technical Specifications

Model Maximum Recurrent Peak Reverse Voltage (VRRM) Maximum RMS Voltage (VRMS) Maximum DC Blocking Voltage (VDC) Maximum Average Forward Current (IF(AV)) @ Tc=50C Peak Forward Surge Current (IFSM) 8.3ms single half-sine-wave Maximum Instantaneous Forward Voltage (VF) @ 2.0A Maximum Reverse Current (IR) @ TA=25C Typical Junction Capacitance (CJ) per leg It Rating for fusing @Tj=25
GBL 6005 50 V 35 V 50 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS
GBL 601 100 V 70 V 100 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS
GBL 602 200 V 140 V 200 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS
GBL 604 400 V 280 V 400 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS
GBL 606 600 V 420 V 600 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS
GBL 608 800 V 560 V 800 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS
GBL 610 1000 V 700 V 1000 V 6.0 A 50 A 1.0 V 500.0 A 175.0 pF 127 AS

General Specifications

Parameter Value
Operating Junction Temperature Range (TJ) -55 +150 C
Storage Temperature Range (TSTG) -55 +150 C
Typical Thermal Resistance (RJA) 4.2 C/W
Typical Thermal Resistance (RJC) 35 C/W
Maximum Reverse Current (IR) @ TC=100C 1.0 mA
Mounting Position Any

2410121853_LGE-GBL608_C7498687.pdf

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