LRC S LBC817 16LT1G NPN Silicon Transistor for Electronic Circuits Switching and Amplification Tasks
Key Attributes
Model Number:
S-LBC817-16LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC817-16LT1G
Package:
SOT-23
Product Description
Product Overview
The LBC817 series are NPN silicon general-purpose transistors designed for various electronic applications. They offer a range of DC current gain and saturation voltage characteristics, making them suitable for switching and amplification tasks.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified (for S- prefix devices)
- RoHS Compliance: Declared
Technical Specifications
| Characteristic | Symbol | LBC817-16 | LBC817-25 | LBC817-40 | Unit | Conditions |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | V CEO | 45 | V | |||
| CollectorBase Voltage | V CBO | 50 | V | |||
| EmitterBase Voltage | V EBO | 5.0 | V | |||
| Collector Current Continuous | I C | 500 | mAdc | |||
| Total Device Dissipation (FR5 Board) | P D | 225 | mW | TA = 25C, Derate above 25C: 1.8 mW/C | ||
| Total Device Dissipation (Alumina Substrate) | P D | 300 | mW | TA = 25C, Derate above 25C: 2.4 mW/C | ||
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 45 | V | IC = 10 mA | ||
| CollectorEmitter Breakdown Voltage | V (BR)CES | 50 | V | VEB = 0, IC = 10 A | ||
| EmitterBase Breakdown Voltage | V (BR)EBO | 5.0 | V | IE = 1.0 A | ||
| Collector Cutoff Current | I CBO | 100 | nA | VCB = 20 V | ||
| Collector Cutoff Current | I CBO | 5.0 | A | VCB = 20 V, TA = 150C | ||
| DC Current Gain | h FE | 100 250 | 160 400 | 250 600 | IC = 100 mA, V CE = 1.0 V | |
| DC Current Gain | h FE | 40 | IC = 500 mA, V CE = 1.0 V | |||
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.7 | V | IC = 500 mA, IB = 50 mA | ||
| BaseEmitter On Voltage | V BE(on) | 1.2 | V | IC = 500 mA, V CE = 1.0 V | ||
| CurrentGain Bandwidth Product | f T | 100 | MHz | IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz | ||
| Output Capacitance | C obo | 10 | pF | VCB = 10 V, f = 1.0 MHz | ||
2410010132_LRC-S-LBC817-16LT1G_C5200151.pdf
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