General Purpose PNP Silicon Transistor LRC L9012PLT1G with SOT23 Package and Electrical Performance
Key Attributes
Model Number:
L9012PLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
300mW
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9012PLT1G
Package:
SOT-23
Product Description
Product Overview
PNP Silicon General Purpose Transistors designed for various electronic applications. These transistors offer reliable performance with key electrical and thermal characteristics.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS
- Package: SOT-23 (TO-236AB)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix series)
Technical Specifications
| Device Marking | Order Number | Shipping Quantity | Hfe Range | Collector-Emitter Saturation Voltage (VCE(S)) |
| 12P | L9012PLT1G | 3000/Tape&Reel | 100~200 | -0.6 V |
| 12P | L9012PLT3G | 10000/Tape&Reel | 100~200 | -0.6 V |
| 12Q | L9012QLT1G | 3000/Tape&Reel | 150~300 | -0.6 V |
| 12Q | L9012QLT3G | 10000/Tape&Reel | 150~300 | -0.6 V |
| 12R | L9012RLT1G | 3000/Tape&Reel | 200~400 | -0.6 V |
| 12R | L9012RLT3G | 10000/Tape&Reel | 200~400 | -0.6 V |
| 12S | L9012SLT1G | 3000/Tape&Reel | 300~600 | -0.6 V |
| 12S | L9012SLT3G | 10000/Tape&Reel | 300~600 | -0.6 V |
Maximum Ratings
| Symbol | Value | Unit |
| VCEO | -20 | V |
| VCBO | -40 | V |
| VEBO | -5 | V |
| IC (continuous) | -500 | mAdc |
| Tj, Tstg | -55 to +150 | oC |
Thermal Characteristics
| Symbol | Description | Value | Unit |
| PD | Total Device Dissipation (FR-5 Board) | 225 | mW |
| Derate above 25oC (FR-5 Board) | 1.8 | mW/oC | |
| JA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | oC/W |
| PD | Total Device Dissipation (Alumina Substrate) | 300 | mW |
| Derate above 25oC (Alumina Substrate) | 2.4 | mW/oC | |
| JA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | oC/W |
Electrical Characteristics
| Symbol | Characteristic | Min | Typ | Max | Unit |
| V(BR)CEO | Collector-Emitter Breakdown Voltage (IC=-1.0mA) | -20 | - | - | V |
| V(BR)EBO | Emitter-Base Breakdown Voltage (IE=-100A) | -5 | - | - | V |
| V(BR)CBO | Collector-Base Breakdown Voltage (IC=-100A) | -40 | - | - | V |
| ICBO | Collector Cutoff Current (VCB=-35V) | - | - | -150 | nA |
| IEBO | Emitter Cutoff Current (VBE=-4V) | - | - | -150 | nA |
| hFE | DC Current Gain (IC=-50mA, VCE=-1V) | 100 | - | 600 | - |
| VCE(S) | Collector-Emitter Saturation Voltage (IC=-500mA, IB=-50mA) | - | - | -0.6 | V |
2108231730_LRC-L9012PLT1G_C2887401.pdf
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