Silicon transistor LRC LMBT2907AWT1G PNP type with AEC Q101 qualification and automotive suitability
Key Attributes
Model Number:
LMBT2907AWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT2907AWT1G
Package:
SC-70(SOT-323)
Product Description
Product Overview
The LMBT2907AWT1G is a general-purpose PNP silicon transistor from LESHAN RADIO COMPANY, LTD. Designed for a wide range of applications, it offers reliable performance with key electrical characteristics for both ON and OFF states, as well as small-signal and switching parameters. This device is AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Model: LMBT2907AWT1G
- Package Type: SOT-323 / SC-70
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS compliant
- Marking: 20
- Origin: Not specified
- Material: Silicon
- Color: Not specified
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Conditions |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | -60 | Vdc | ||
| CollectorBase Voltage | V CBO | -60 | Vdc | ||
| EmitterBase Voltage | V EBO | -5.0 | Vdc | ||
| Collector Current Continuous | I C | -600 | mAdc | ||
| Total Device Dissipation | PD | 150 | mW | FR5 Board, TA = 25C | |
| Thermal Resistance, Junction to Ambient | RJA | 833 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | -55 | +150 | C | |
| OFF CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | -60 | Vdc | I C = 10 mAdc, I B = 0 | |
| CollectorEmitter Breakdown Voltage | V (BR)CBO | -60 | Vdc | I C = 10 Adc, I E = 0 | |
| EmitterBase Breakdown Voltage | V (BR)EBO | -5.0 | Vdc | I E = 10Adc, I C = 0 | |
| Base Cutoff Current | I BL | -50 | nAdc | V CE = 30Vdc, V EB(OFF) = 0.5Vdc | |
| Collector Cutoff Current | I CEX | -50 | nAdc | V CE = 30Vdc, V EB(OFF) = 0.5Vdc | |
| ON CHARACTERISTICS | |||||
| DC Current Gain | hFE | 75 | I C =0.1 mAdc, V CE =10 Vdc | ||
| DC Current Gain | hFE | 100 | I C = 1.0 mAdc, V CE = 10 Vdc | ||
| DC Current Gain | hFE | 100 | I C = 10 mAdc, V CE = 10 Vdc | ||
| DC Current Gain | hFE | 100 | 300 | I C = 150mAdc, V CE = 10Vdc | |
| DC Current Gain | hFE | 50 | I C = 500mAdc, V CE =10 Vdc | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | I C = 150 mAdc, I B = 15 mAdc | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -1.6 | Vdc | I C = 500 mAdc, I B = 50 mAdc | |
| BaseEmitter Saturation Voltage | V BE(sat) | -1.3 | Vdc | I C = 150 mAdc, I B = 15mAdc | |
| BaseEmitter Saturation Voltage | V BE(sat) | -2.6 | Vdc | I C = 500mAdc, I B = 50mAdc | |
| SMALLSIGNAL CHARACTERISTICS | |||||
| CurrentGain Bandwidth Product | f T | 200 | MHz | I C = 50mAdc, V CE= 20Vdc, f = 100MHz | |
| Output Capacitance | C obo | 8.0 | pF | V CB = 10 Vdc, I E = 0, f = 1.0 MHz | |
| Input Capacitance | C ibo | 30 | pF | V EB = 2.0Vdc, I C = 0, f = 1.0 MHz | |
| SWITCHING CHARACTERISTICS | |||||
| TurnOn Time | t on | 45 | ns | V CC = 30 Vdc, I C = 150 mAdc, I B1 = 15 mAdc | |
| Delay Time | t d | 10 | ns | V CC = 30 Vdc, I C = 150 mAdc, I B1 = 15 mAdc | |
| Rise Time | t r | 40 | ns | V CC = 30 Vdc, I C = 150 mAdc, I B1 = 15 mAdc | |
| Storage Time | t s | 80 | ns | V CC = 6.0 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc | |
| Fall Time | t f | 30 | ns | V CC = 6.0 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc | |
| TurnOff Time | t off | 100 | ns | V CC = 6.0 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc | |
2409291503_LRC-LMBT2907AWT1G_C21115.pdf
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