NPN transistor LRC LBSS4350SY3T1G featuring wide ASO and RoHS compliance for automotive applications

Key Attributes
Model Number: LBSS4350SY3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
148MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBSS4350SY3T1G
Package:
SOT-89
Product Description

Product Overview

This NPN transistor offers low collector-to-emitter saturation voltage, fast switching speed, and large current capacity with a wide ASO. It is suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. The material complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD. (LRC)
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified, PPAP capable
  • Product Variants: LBSS4350SY3T1G, S-LBSS4350SY3T1G

Technical Specifications

ParameterSymbolLimitsUnitNotes
Maximum RatingsVCEO50V
VCBO60V
VEBO6V
IC (Pulse)6A
Electrical CharacteristicsICBO (@VCB=40V, IE=0)-1A
IEBO (@VEB=4V, IC=0)-1A
HFE (@VCE=2V, IC=100mA)200-
HFE (@VCE=2V, IC=3A)500-
Saturation VoltageVCE(sat) (@IC=2A, IB=100mA)-0.19V
VBE(sat) (@IC=2A, IB=100mA)-0.94V
Switching CharacteristicsfT (@VCE=10V, IC=50mA, f=100MHz)-148MHz
Cob (@VCB=10V, f=1.0MHz, IE=0)-15pF
Thermal CharacteristicsPD (Total Device Dissipation, FR-4 Board @ TA=25C)-550mW
Derate above 25C-225mW/C
RJA (Thermal Resistance, Junction-to-Ambient)-4.4C/W
TJ, Tstg (Junction and Storage Temperature)-55+150C

2206021745_LRC-LBSS4350SY3T1G_C2986744.pdf

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