86--136 6733 2386
quality Low RDS on Power MOSFET LGE 2N7002KW N Channel Device with SOT323 Package and ESD Protection Features factory
quality Low RDS on Power MOSFET LGE 2N7002KW N Channel Device with SOT323 Package and ESD Protection Features factory

Low RDS on Power MOSFET LGE 2N7002KW N Channel Device with SOT323 Package and ESD Protection Features

Key Attributes
Model Number: 2N7002KW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
4Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.6pF
Output Capacitance(Coss):
3.8pF
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
16pF
Gate Charge(Qg):
720pC@10V
Mfr. Part #:
2N7002KW
Package:
SOT-323
Product Description

Product Overview

The 2N7002KW is an N-Channel Advanced Power MOSFET designed for various switching applications. It features low RDS(on) at 10V VGS, 5V logic level control, and is housed in a SOT323 package. This device offers ESD protection and is Pb-free and RoHS compliant, making it suitable for logic level translators, high-speed line drivers, low-side load switches, and general switching circuits.

Product Attributes

  • Brand: LGE Semiconductor
  • Package: SOT323
  • Certifications: PbFree, RoHS Compliant

Technical Specifications

Part NumberDescriptionV(BR)DSSRDS(ON) Typ @ VGS=10VRDS(ON) Typ @ VGS=4.5VID Max @ TA=25CPD Max @ TA=25CPackage
2N7002KWN Channel Advanced Power MOSFET60 V1.9 2.1 0.3 A0.3 WSOT323

2409291503_LGE-2N7002KW_C20618081.pdf

Related Products
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS factory
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.