Silicon Carbide MOSFET LGE LGE3M30065Q for Enhanced System Efficiency and Thermal Runaway Protection
Key Attributes
Model Number:
LGE3M30065Q
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
92A
Operating Temperature -:
-55℃~+175℃
RDS(on):
36mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
13pF
Pd - Power Dissipation:
326W
Output Capacitance(Coss):
295pF
Input Capacitance(Ciss):
3.48nF
Gate Charge(Qg):
163nC
Mfr. Part #:
LGE3M30065Q
Package:
TO-247-4
Product Description
Product Overview
The LGE3M30065Q is a Silicon Carbide Power MOSFET designed for high-efficiency and high-reliability applications. It offers advantages such as higher system efficiency, convenience for parallel device configurations without thermal runaway, suitability for high-temperature applications, and robust performance in hard switching scenarios. This device is sensitive to electrostatic discharge and requires adherence to ESD handling procedures.
Product Attributes
- Brand: LGE
- Material: Silicon Carbide
- Package: TO-247-4
- Marking: LGE3M30065Q
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain - Source Voltage | VDSmax | VGS=0V, ID=100A | 650 | V |
| Gate - Source Voltage (dynamic) | VGSmax | AC (f>1 Hz) | -8 / +23 | V |
| Gate - Source Voltage (static) | VGSop | static | -4 / +18 | V |
| Continuous Drain Current | ID | VGS = 18V, TC=25C | 92 | A |
| Continuous Drain Current | ID | VGS = 18V, TC=100C | 65 | A |
| Pulsed Drain Current | ID(pulse) | TC=25C | 210 | A |
| Short Circuit Capability | tSC | VDD=400V, VGS=18V | 9 | S |
| Short Circuit Capability | IDS | VDD=400V, VGS=18V | 400 | A |
| Total power dissipation | PD | TC=25C | 326 | W |
| Operating Junction Temperature | TJ | -55 to 175 | C | |
| Storage Temperature | TSTG | -55 to 175 | C | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 100A | 650 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 10mA | 2.0 / 2.7 / 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 10mA, TJ = 150C | 2.0 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 10mA, TJ = 175C | 1.9 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 650V, VGS = 0V | 0 / 1 / 100 | A |
| Gate-Source Leakage Current | IGSS | VGS = 18V, VDS = 0V | 0 / 10 / 200 | nA |
| Gate-Source Leakage Current | IGSS | VGS = -4V, VDS = 0V | -200 / -10 / 0 | nA |
| Drain-Source On-State Resistance | RDS(on) | VGS = 15V, ID = 40 A | 39 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS = 15V, ID = 40 A, TJ = 150C | 36 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS = 15V, ID = 40 A, TJ = 175C | 39 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS = 18V, ID = 40 A | 28 / 36 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS = 18V, ID = 40 A, TJ = 150C | 32 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS = 18V, ID = 40 A, TJ = 175C | 34 | m |
| Transconductance | gfs | VDS = 20V, ID = 40 A | 20 | S |
| Transconductance | gfs | VDS = 20V, ID = 40 A, TJ = 150C | 20 | S |
| Transconductance | gfs | VDS = 20V, ID = 40 A, TJ = 175C | 20 | S |
| Input capacitance | Ciss | VDS = 400V, VGS = 0V, f = 1MHz | 3480 | pF |
| Output capacitance | Coss | VDS = 400V, VGS = 0V, f = 1MHz | 295 | pF |
| Reverse transfer capacitance | Crss | VDS = 400V, VGS = 0V, f = 1MHz | 13 | pF |
| Output Capacitor Stored Energy | Eoss | VDS = 400V, VGS = 0V, f = 1MHz | 28 | J |
| Total gate charge | Qg | VDS = 400V, VGS = -4V / 18V, ID = 40 A | 163 | nC |
| Gate-source charge | Qgs | VDS = 400V, VGS = -4V / 18V, ID = 40 A | 47 | nC |
| Gate-drain charge | Qg d | VDS = 400V, VGS = -4V / 18V, ID = 40 A | 65 | nC |
| Internal gate input resistance | Rg(int) | f = 1MHz, ID = 0A | 2.0 | |
| Turn-On Switching Energy | EON | VDS = 400 V, VGS = -4V/18V, ID = 40A, RG(ext) = 2, L=200H | 44 | J |
| Turn-Off Switching Energy | EOFF | VDS = 400 V, VGS = -4V/18V, ID = 40A, RG(ext) = 2, L=200H | 46 | J |
| Turn-On Delay Time | td(on) | VDS = 400 V, VGS = -4V/18V, ID = 40A, RG(ext) = 2, L=200H | 12 | ns |
| Rise Time | tr | VDS = 400 V, VGS = -4V/18V, ID = 40A, RG(ext) = 2, L=200H | 14 | ns |
| Turn-Off Delay Time | td(off) | VDS = 400 V, VGS = -4V/18V, ID = 40A, RG(ext) = 2, L=200H | 31 | ns |
| Fall Time | tf | VDS = 400 V, VGS = -4V/18V, ID = 40A, RG(ext) = 2, L=200H | 7 | ns |
| Avalanche Capability | EAS | VDD = 100V, VGS=18V, L=1mH | 312 | mJ |
| Avalanche Capability | IAV | VDD = 100V, VGS=18V, L=1mH | 25 | A |
| Diode Forward Voltage | VSD | VGS = -4V, ISD = 20A | 3.9 | V |
| Diode Forward Voltage | VSD | VGS = -4V, ISD = 20A, TJ = 150C | 3.5 | V |
| Diode Forward Voltage | VSD | VGS = -4V, ISD = 20A, TJ = 175C | 3.4 | V |
| Continuous Diode Forward Current | IS | VGS = -5V | 62 | A |
| Reverse Recovery time | trr | VGS = -4V, ISD = 40A, VR= 400V, dif/dt = 3300 A/s | 23 | ns |
| Reverse Recovery Charge | Qrr | VGS = -4V, ISD = 40A, VR= 400V, dif/dt = 3300 A/s | 430 | nC |
| Peak Reverse Recovery Current | Irrm | VGS = -4V, ISD = 40A, VR= 400V, dif/dt = 3300 A/s | 32 | A |
| Thermal Resistance (per device) | Rth(j-c) | junction-case | 0.37 / 0.46 | 0C/W |
2410301412_LGE-LGE3M30065Q_C27761645.pdf
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