Power management solution LGE LGE2300 with trench processing and lead free rohs compliant features
Key Attributes
Model Number:
LGE2300
Product Custom Attributes
Drain To Source Voltage:
20V
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
60pF
Pd - Power Dissipation:
1.25W
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
630pF
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
LGE2300
Package:
SOT-23
Product Description
Product Overview
The 2300 is designed using trench processing techniques to achieve extremely low on-resistance, fast switching speed, and improved transfer efficiency. These features make it an efficient and reliable device for a variety of DC-DC applications. Key advantages include low on-resistance, 150C operating temperature, fast switching, and lead-free, RoHS compliance. It is suitable for battery protection, load switching, and power management applications.
Product Attributes
- Brand: LG Semiconductor (implied by lgesemi.com)
- Certifications: Lead-Free, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Common Ratings (TC=25C Unless Otherwise Noted) | ||||||
| VGS | Gate-Source Voltage | ±12 | V | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | 20 | V | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| T STG | Storage Temperature Range | -50 | 155 | °C | ||
| ID | Diode Continuous Forward Current | TC=25°C | 5.2 | Ä | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250µA | 20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=20V,VGS=0V, Tc=25°C | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=20V,VGS=0V, Tc=125°C | 100 | µA | ||
| IGSS | Gate-Body Leakage Current | VGS=±12V,VDS=0V | ±100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 0.5 | 0.7 | 1.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=5.2A | 25 | 32 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=4.8A | 32 | 40 | mΩ | |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | 630 | pF | |||
| Coss | Output Capacitance | 150 | pF | |||
| Crss | Reverse Transfer Capacitance | VDS=10V,VGS=0V, f=1MHz | 60 | pF | ||
| Qg | Total Gate Charge | 11 | nC | |||
| Qgs | Gate-Source Charge | 1.6 | nC | |||
| Qgd | Gate-Drain Charge | VDS=10V,ID=2.8A, VGS=4.5V | 2.7 | nC | ||
| Switching Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| td(on) | Turn-on Delay Time | VDD=10V, ID=1A, RG=6Ω, VGS=4.5V, RL=5Ω | 14.5 | nS | ||
| tr | Turn-on Rise Time | VDD=10V, ID=1A, RG=6Ω, VGS=4.5V, RL=5Ω | 46 | nS | ||
| td(off) | Turn-Off Delay Time | VDD=10V, ID=1A, RG=6Ω, VGS=4.5V, RL=5Ω | 52 | nS | ||
| tf | Turn-Off Fall Time | VDD=10V, ID=1A, RG=6Ω, VGS=4.5V, RL=5Ω | 39 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| ISD | Source-drain current(Body Diode) | 5.2 | Ä | |||
| ISDM | Pulsed Source-drain current (Body Diode) | Tc=25°C | 20 | Ä | ||
| VSD | Forward on voltage | Tj=25°C,ISD=2.8A, VGS=0V | 0.85 | 1.3 | V | |
2410121546_LGE-LGE2300_C22388880.pdf
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