Durable LGE LGE2310 60V N Channel Power MOSFET designed for battery switching and DC DC converters
Key Attributes
Model Number:
LGE2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
125mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
19.5pF
Output Capacitance(Coss):
34pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
247pF
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
LGE2310
Package:
SOT-23
Product Description
Product Overview
The 2310 is a 60V N-Channel Power MOSFET designed for high-performance applications. It features excellent Rds(on), TrenchFET technology, and high power and current handling capabilities. This surface-mount, halogen-free component is ideal for battery switching and DC/DC converter applications.
Product Attributes
- Marking: According to customer requirement
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics (Ratings at 25ambient temperature unless otherwise specified.) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 3 | A | |||
| Pulsed Drain Current (note 1) | IDM | 10 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 357 | ℃/W | |||
| Junction and Storage Temperature | TJ, TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics (Ratings at 25ambient temperature unless otherwise specified). | ||||||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V,VGS = 0V | 1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =250µA | 0.5 | 2 | V | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =10V, ID =3A | 105 | mΩ | ||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =4.5V, ID =3A | 125 | mΩ | ||
| Forward transconductance (note 3) | gFS | VDS =15V, ID =2A | 1.4 | S | ||
| Diode forward voltage (note 3) | VSD | IS=3A, VGS = 0V | 1.2 | V | ||
| Dynamic Characteristics (note4) | ||||||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f =1MHz | 2310 | pF | ||
| Output Capacitance | Coss | 34 | pF | |||
| Reverse Transfer Capacitance | Crss | 19.5 | pF | |||
| Switching Characteristics (note 4) | ||||||
| Turn-on delay time | td(on) | VDS= 30 V,ID=1.5A, VGS=10V, RGEN =1 Ω | 6 | ns | ||
| Turn-on rise time | tr | 15 | ns | |||
| Turn-off delay time | td(off) | 15 | ns | |||
| Turn-off fall time | tf | 10 | ns | |||
| Total Gate Charge | Qg | VDS =30V, VGS = 4.5 V, ID = 3A | 6 | nC | ||
| Gate-Source Charge | Qgs | 1 | nC | |||
| Gate-Drain Charge | Qg d | 1.3 | nC | |||
2409302203_LGE-LGE2310_C27975290.pdf
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