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quality Plastic Encapsulated Glass Passivated Triac LGE BT136S-600E for Sensitive Gate Switching and Control factory
quality Plastic Encapsulated Glass Passivated Triac LGE BT136S-600E for Sensitive Gate Switching and Control factory

Plastic Encapsulated Glass Passivated Triac LGE BT136S-600E for Sensitive Gate Switching and Control

Key Attributes
Model Number: BT136S-600E
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
5mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
-
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
-
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT136S-600E
Package:
TO-252
Product Description

Product Overview

The BT136S/M Series E Triacs are glass-passivated, sensitive gate triacs in a plastic envelope, designed for surface mounting. They are suitable for general-purpose bidirectional switching and phase control applications requiring high sensitivity in all four quadrants.

Product Attributes

  • Brand: BT136S/M Series E
  • Material: Glass passivated
  • Certifications: Plastic meets UL94 V0 at 1/8"
  • Origin: http://www.luguang.cn
  • Contact: mail:lge@luguang.cn

Technical Specifications

SymbolParameterConditionsBT136S-500EBT136S-600EBT136S-800EUnit
VDRMRepetitive peak off-state voltage500600800V
IT(RMS)RMS on-state currentfull sine wave; Tmb 107 C444A
ITSMNon-repetitive peak on-state currentfull sine wave; Tj = 25 C prior to surge; t = 20 ms252525A
ITSMNon-repetitive peak on-state currentfull sine wave; Tj = 25 C prior to surge; t = 16.7 ms272727A
I2tI2t for fusingt = 10 ms3.13.13.1A2s
dIT/dtRepetitive rate of rise of on-state currentITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s after triggering50 (T2+ G+, T2+ G-, T2- G-)50 (T2+ G+, T2+ G-, T2- G-)50 (T2+ G+, T2+ G-, T2- G-)A/s
dIT/dtRepetitive rate of rise of on-state currentITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s after triggering10 (T2- G+)10 (T2- G+)10 (T2- G+)A/s
IGMPeak gate current222A
VGMPeak gate voltage555V
PGMPeak gate power555W
PG(AV)Average gate power over any 20 ms period0.50.50.5W
TstgStorage temperature-40-40-40C
TjOperating junction temperature125125125C
Rth j-mbThermal resistance junction to mounting basefull cycle3.03.03.0K/W
Rth j-mbThermal resistance junction to mounting basehalf cycle3.73.73.7K/W
Rth j-aThermal resistance junction to ambientpcb (FR4) mounted; footprint as in Fig.14757575K/W
IGTGate trigger currentVD = 12 V; IT = 0.1 A (T2+ G+)2.52.52.5mA
IGTGate trigger currentVD = 12 V; IT = 0.1 A (T2+ G-)4.04.04.0mA
IGTGate trigger currentVD = 12 V; IT = 0.1 A (T2- G-)5.05.05.0mA
IGTGate trigger currentVD = 12 V; IT = 0.1 A (T2- G+)111111mA
ILLatching currentVD = 12 V; IGT = 0.1 A (T2+ G+)3.03.03.0mA
ILLatching currentVD = 12 V; IGT = 0.1 A (T2+ G-)101010mA
ILLatching currentVD = 12 V; IGT = 0.1 A (T2- G-)2.52.52.5mA
ILLatching currentVD = 12 V; IGT = 0.1 A (T2- G+)4.04.04.0mA
IHHolding currentVD = 12 V; IGT = 0.1 A2.22.22.2mA
VTOn-state voltageIT = 5 A1.41.41.4V
VTOn-state voltageIT = 5 A1.701.701.70V
VGTGate trigger voltageVD = 12 V; IT = 0.1 A0.70.70.7V
VGTGate trigger voltageVD = 12 V; IT = 0.1 A1.51.51.5V
VGTGate trigger voltageVD = 400 V; IT = 0.1 A; Tj = 125 C0.250.250.25-
VGTGate trigger voltageVD = 400 V; IT = 0.1 A; Tj = 125 C0.40.40.4-
IDOff-state leakage currentVD = VDRM(max); Tj = 125 C0.10.10.1mA
IDOff-state leakage currentVD = VDRM(max); Tj = 125 C0.50.50.5mA
dVD/dtCritical rate of rise of off-state voltageVDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit505050V/s
tgtGate controlled turn-on timeITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s222s

2410121717_LGE-BT136S-600E_C5455738.pdf

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