Monolithic Bias Resistor Network Transistors LRC LMUN5216DW1T1G SC88 Package for Circuit Integration
Key Attributes
Model Number:
LMUN5216DW1T1G
Product Custom Attributes
Emitter-Base Voltage VEBO:
6V
Output Voltage(VO(on)):
200mV
Input Resistor:
4.7kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN5216DW1T1G
Package:
SC-88
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. LMUN5211DW1T1G Series offers Dual Bias Resistor Transistors (BRTs) in the SC-88/SOT-363 package. These NPN silicon surface mount transistors integrate monolithic bias resistor networks, simplifying circuit design, reducing board space, and minimizing component count by replacing individual transistors and their external bias components. The series is designed for low power surface mount applications where space is limited. The S- prefix denotes automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Series: LMUN5211DW1T1G Series, S-LMUN5211DW1T1G Series
- Package Type: SC-88/SOT-363
- Transistor Type: NPN Silicon
- Configuration: Dual Bias Resistor Transistors (BRT) with Monolithic Bias Resistor Network
- Material Compliance: RoHS compliant
- Qualification: AEC-Q101 Qualified (S- prefix models)
- Capability: PPAP Capable (S- prefix models)
Technical Specifications
| Model | Marking | R1 (K) | R2 (K) | Vin (V) | Package | Shipping |
|---|---|---|---|---|---|---|
| LMUN5211DW1T1G | 7A | 10 | 10 | -10~+12 | SC88 | 3000/Tape&Reel |
| LMUN5211DW1T3G | 7A | 10 | 10 | -10~+12 | SC88 | 10000/Tape&Reel |
| LMUN5212DW1T1G | 7H | 2.2 | 2.2 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5212DW1T3G | 7H | 2.2 | 2.2 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5213DW1T1G | 7J | 4.7 | 4.7 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5213DW1T3G | 7J | 4.7 | 4.7 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5214DW1T1G | 7B | 22 | 22 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5214DW1T3G | 7B | 22 | 22 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5215DW1T1G | 7C | 47 | 47 | -6~+40 | SC88 | 3000/Tape&Reel |
| LMUN5215DW1T3G | 7C | 47 | 47 | -6~+40 | SC88 | 10000/Tape&Reel |
| LMUN5216DW1T1G | 7D | 10 | 47 | -6~+30 | SC88 | 3000/Tape&Reel |
| LMUN5216DW1T3G | 7D | 10 | 47 | -6~+30 | SC88 | 10000/Tape&Reel |
| LMUN5230DW1T1G | 7E | 10 | 10 | -5~+30 | SC88 | 3000/Tape&Reel |
| LMUN5230DW1T3G | 7E | 10 | 10 | -5~+30 | SC88 | 10000/Tape&Reel |
| LMUN5231DW1T1G | 7F | 4.7 | 1.0 | -8~+40 | SC88 | 3000/Tape&Reel |
| LMUN5231DW1T3G | 7F | 4.7 | 1.0 | -8~+40 | SC88 | 10000/Tape&Reel |
| LMUN5232DW1T1G | 7G | 1.0 | 2.2 | -6~+12 | SC88 | 3000/Tape&Reel |
| LMUN5232DW1T3G | 7G | 1.0 | 2.2 | -6~+12 | SC88 | 10000/Tape&Reel |
| LMUN5233DW1T1G | 7K | 4.7 | 47 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5233DW1T3G | 7K | 4.7 | 47 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5234DW1T1G | 7L | 22 | 47 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5234DW1T3G | 7L | 22 | 47 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5235DW1T1G | 7M | 2.2 | 47 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5235DW1T3G | 7M | 2.2 | 47 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5236DW1T1G | 7P | 47 | 22 | -10~+40 | SC88 | 3000/Tape&Reel |
| LMUN5236DW1T3G | 7P | 47 | 22 | -10~+40 | SC88 | 10000/Tape&Reel |
| LMUN5237DW1T1G | 7N | 100 | 100 | -10~+30 | SC88 | 3000/Tape&Reel |
| LMUN5237DW1T3G | 7N | 100 | 100 | -10~+30 | SC88 | 10000/Tape&Reel |
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | Common for Q1 and Q2 |
| Collector-Emitter Voltage | VCEO | 50 | Vdc | Common for Q1 and Q2 |
| Collector Current | IC | 100 | mAdc | Common for Q1 and Q2 |
| Emitter-Base Breakdown Voltage | VEBO | 6 | Vdc | Common for Q1 and Q2 |
| Total Device Dissipation (One Junction Heated, TA=25C) | PD | 187 | mW | FR4 @ Minimum Pad |
| Total Device Dissipation (One Junction Heated, TA=25C) | PD | 250 | mW | FR4 @ 1.0 x 1.0 inch Pad |
| Total Device Dissipation (Both Junctions Heated, TA=25C) | PD | 250 | mW | FR4 @ Minimum Pad |
| Total Device Dissipation (Both Junctions Heated, TA=25C) | PD | 385 | mW | FR4 @ 1.0 x 1.0 inch Pad |
| Junction-to-Ambient Thermal Resistance (One Junction Heated) | RJA | 670 | C/W | FR4 @ Minimum Pad |
| Junction-to-Ambient Thermal Resistance (One Junction Heated) | RJA | 490 | C/W | FR4 @ 1.0 x 1.0 inch Pad |
| Junction-to-Ambient Thermal Resistance (Both Junctions Heated) | RJA | 493 | C/W | FR4 @ Minimum Pad |
| Junction-to-Ambient Thermal Resistance (Both Junctions Heated) | RJA | 325 | C/W | FR4 @ 1.0 x 1.0 inch Pad |
| Junction-to-Lead Thermal Resistance (Both Junctions Heated) | RJL | 188 | C/W | FR4 @ Minimum Pad |
| Junction-to-Lead Thermal Resistance (Both Junctions Heated) | RJL | 208 | C/W | FR4 @ 1.0 x 1.0 inch Pad |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | |
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | 100 | nAdc | |
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | 500 | nAdc | |
| Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) | V(BR)CBO | 50 | Vdc | |
| Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) | V(BR)CEO | 50 | Vdc | |
| DC Current Gain (VCE = 10 V, IC = 5.0 mA) | hFE | 35-350 | Varies by model | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) | VCE(sat) | 0.25 | Vdc | Varies by model |
| Output Voltage (on) (VCC = 5.0 V, RL = 1.0 k) | VOL | 0.2 | Vdc | Varies by model and VB |
| Output Voltage (off) (VCC = 5.0 V, RL = 1.0 k) | VOH | 4.9 | Vdc | Varies by model and VB |
| Input Resistor | R1 | 1.0 - 100 | k | Varies by model |
| Resistor Ratio | R1/R2 | 0.038 - 2.6 | Varies by model |
Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2212131909_LRC-LMUN5216DW1T1G_C5273163.pdf
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