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quality Silicon PNP Transistor LRC LDTB123YLT1G Featuring Monolithic Bias Resistor Network for Easy Device Design factory
quality Silicon PNP Transistor LRC LDTB123YLT1G Featuring Monolithic Bias Resistor Network for Easy Device Design factory

Silicon PNP Transistor LRC LDTB123YLT1G Featuring Monolithic Bias Resistor Network for Easy Device Design

Key Attributes
Model Number: LDTB123YLT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
2.2kΩ
Resistor Ratio:
4.5
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTB123YLT1G
Package:
SOT-23
Product Description

Product Overview

The LDTB123YLT1G is a PNP Silicon Surface Mount Transistor featuring a monolithic bias resistor network. This integrated design simplifies circuit configuration by eliminating the need for external input resistors, making device design easier. The built-in thin-film resistors offer positive input biasing and minimize parasitic effects. This transistor is suitable for inverter, interface, and driver applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Series Prefix: S- (for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable)

Technical Specifications

Model Device Marking R1 (K) R2 (K) Package Shipping
LDTB123YLT1G F52 2.2 10 SOT-23 3000/Tape & Reel
LDTB123YLT3G F52 2.2 10 SOT-23 10000/Tape & Reel
S-LDTB123YLT1G F52 2.2 10 SOT-23 3000/Tape & Reel
S-LDTB123YLT3G F52 2.2 10 SOT-23 10000/Tape & Reel
Parameter Symbol Unit Conditions Min. Typ. Max.
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC V -50 - -
Input voltage VIN V -12 to +5 - -
Output current IC mA -500 - -
Power dissipation PD mW - 200 -
Junction temperature Tj C -55 - +150
Storage temperature Tstg C -55 - +150
Electrical Characteristics (Ta=25C)
Input voltage (OFF) VI(off) V VCC= 5V, IO= 100A - - -0.1
Input voltage (ON) VI(on) V VO= 0.3V, IO= 20mA -2 - -
Output voltage (ON) VO(on) V IO/II= 50mA/2.5mA - - -0.3
Input current II A VI= 5V - - -0.5
Output current IO mA VCC= 50V, VI= 0V - - -3.0
Input resistance R1 k VO= 5V, IO= 50mA 2.2 - -
DC current gain GI - VCE= 10V, IE= 50mA, f= 100MHz 56 - 200
Resistance ratio R2/R1 - 3.6 - 5.5
Transition frequency fT MHz - - 200
Transition frequency of the device MHz - - 200
Dimension Unit Min Max
A mm 2.80 3.04
B mm 1.20 1.40
C mm 0.89 1.11
D mm 0.37 0.50
G mm 1.78 2.04
H mm 0.013 0.100
J mm 0.085 0.177
K mm 0.35 0.69
L mm 0.89 1.02
S mm 2.10 2.64
V mm 0.45 0.60

1912111437_LRC-LDTB123YLT1G_C411187.pdf

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