High Side Switching P Channel MOSFET IXTA96P085T TrenchPTM Power Device for Battery Charger Circuits
Key Attributes
Model Number:
IXTA96P085T
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
96A
RDS(on):
13mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
-
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
13.1nF
Pd - Power Dissipation:
298W
Gate Charge(Qg):
180nC@10V
Mfr. Part #:
IXTA96P085T
Package:
TO-263AA
Product Description
Product Overview
The IXTA96P085T, IXTP96P085T, and IXTH96P085T are P-Channel Enhancement Mode TrenchPTM Power MOSFETs from IXYS. They are designed for high-side switching, push-pull amplifiers, DC choppers, automatic test equipment, current regulators, and battery charger applications. These MOSFETs offer advantages such as easy mounting, space savings, and high power density, featuring international standard packages, avalanche rating, extended FBSOA, fast intrinsic diode, and low RDS(ON) and QG.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patents)
- Certifications: Covered by multiple U.S. patents
Technical Specifications
| Symbol | Test Conditions | IXTA96P085T / IXTP96P085T / IXTH96P085T | Min. | Typ. | Max. |
| VDSS | TJ = 25C to 150C | -85 V | |||
| VDGR | TJ = 25C to 150C, RGS = 1M | -85 V | |||
| VGSS | Continuous | 15 V | |||
| VGSM | Transient | 25 V | |||
| ID25 | TC = 25C | -96 A | |||
| IDM | TC = 25C, Pulse Width Limited by TJM | -300 A | |||
| IA | TC = 25C | -48 A | |||
| EAS | TC = 25C | 1 J | |||
| PD | TC = 25C | 298 W | |||
| TJ | -55 ... +150 C | ||||
| TJM | 150 C | ||||
| Tstg | -55 ... +150 C | ||||
| TL | 1.6mm (0.062 in.) from Case for 10s | 300 C | |||
| TSOLD | Plastic Body for 10s | 260 C | |||
| Md | Mounting Torque (TO-220 & TO-247) | 1.13/10 Nm/lb.in. | |||
| Weight | TO-263 | 2.5 g | |||
| Weight | TO-220 | 3.0 g | |||
| Weight | TO-247 | 6.0 g | |||
| BVDSS | VGS = 0V, ID = - 250A | -85 V | |||
| VGS(th) | VDS = VGS, ID = - 250A | -2.0 V | -4.0 V | ||
| IGSS | VGS = 15V, VDS = 0V | 100 nA | |||
| IDSS | VDS = VDSS, VGS = 0V | -10 A | |||
| IDSS | TJ = 125C | -750 A | |||
| RDS(on) | VGS = -10V, ID = 0.5 ID25, Note 1 | 13 m | |||
| gfs | VDS = -10V, ID = 0.5 ID25, Note 1 | 40 S | 66 S | ||
| Ciss | VGS = 0V, VDS = - 25V, f = 1MHz | 13.1 nF | |||
| Coss | VGS = 0V, VDS = - 25V, f = 1MHz | 1175 pF | |||
| Crss | VGS = 0V, VDS = - 25V, f = 1MHz | 460 pF | |||
| td(on) | Resistive Switching Times, VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 | 23 ns | |||
| tr | Resistive Switching Times, VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 | 34 ns | |||
| td(off) | Resistive Switching Times, VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 | 45 ns | |||
| tf | Resistive Switching Times, VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 1 | 22 ns | |||
| Qg(on) | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 180 nC | |||
| Qgs | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 52 nC | |||
| Qgd | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 62 nC | |||
| RthJC | 0.42 C/W | ||||
| RthCS | TO-220 | 0.50 C/W | |||
| RthCS | TO-247 | 0.21 C/W | |||
| IS | Source-Drain Diode, VGS = 0V | -96 A | |||
| ISM | Source-Drain Diode, Repetitive, Pulse Width Limited by TJM | -394 A | |||
| VSD | Source-Drain Diode, IF = - 48A, VGS = 0V, Note 1 | -1.3 V | |||
| trr | Source-Drain Diode | 55 ns | |||
| QRM | Source-Drain Diode | 100 nC | |||
| IRM | Source-Drain Diode | -3.6 A |
2407311402_Littelfuse-IXTA96P085T_C28123132.pdf
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