N Channel Enhancement Mode MOSFET Littelfuse IXFN150N65X2 with low RDS on and high isolation voltage
Key Attributes
Model Number:
IXFN150N65X2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
145A
RDS(on):
17mΩ@10V,75A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
42pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.04kW
Input Capacitance(Ciss):
21nF@25V
Gate Charge(Qg):
355nC@10V
Mfr. Part #:
IXFN150N65X2
Package:
SOT-227B
Product Description
Product Overview
The IXFN150N65X2 is an N-Channel Enhancement Mode Power MOSFET from IXYS, featuring X2-Class HiPerFETTM technology. It offers high current handling capability, fast intrinsic diode, avalanche rating, and low RDS(on). Its miniBLOC package with Aluminium Nitride isolation provides a high isolation voltage of 2500 V~, making it suitable for high power density applications. This MOSFET is designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.
Product Attributes
- Brand: IXYS
- Package: miniBLOC, SOT-227
- Isolation Voltage: 2500 V~
- Material: Aluminium Nitride Isolation
- Origin: USA (implied by US patents)
- Certifications: E153432
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Maximum Ratings | |||||
| VDSS | TJ = 25C to 150C | 650 | V | ||
| VDGR | TJ = 25C to 150C, RGS = 1M | 650 | V | ||
| VGSS | Continuous | 30 | V | ||
| VGSM | Transient | 40 | V | ||
| ID25 | TC = 25C | 145 | A | ||
| IDM | TC = 25C, Pulse Width Limited by TJM | 300 | A | ||
| IA | TC = 25C | 20 | A | ||
| EAS | TC = 25C | 4 | J | ||
| PD | TC = 25C | 1040 | W | ||
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 50 | V/ns | ||
| TJ | -55 | +150 | C | ||
| TJM | 150 | C | |||
| Tstg | -55 | +150 | C | ||
| VISOL | 50/60 Hz, RMS t = 1 minute | 2500 | V~ | ||
| IISOL | t = 1 second | 3000 | V~ | ||
| Md | Mounting Torque | 1.5 | 13 | Nm/lb.in | |
| Terminal Connection Torque | 1.3 | 11.5 | Nm/lb.in | ||
| Weight | 30 | g | |||
| Characteristic Values (TJ = 25C Unless Otherwise Specified) | |||||
| BVDSS | VGS = 0V, ID = 3mA | 650 | V | ||
| VGS(th) | VDS = VGS, ID = 8mA | 3.5 | 5.0 | V | |
| IGSS | VGS = 30V, VDS = 0V | 200 | nA | ||
| IDSS | VDS = VDSS, VGS= 0V | 50 | A | ||
| IDSS | TJ = 125C | 5 | mA | ||
| RDS(on) | VGS = 10V, ID = 75A, Note 1 | 17 | m | ||
| Source-Drain Diode (TJ = 25C, Unless Otherwise Specified) | |||||
| IS | VGS = 0V | 150 | A | ||
| ISM | Repetitive, Pulse Width Limited by TJM | 600 | A | ||
| VSD | IF = 100A, VGS = 0V, Note 1 | 1.4 | V | ||
| trr | 190 | ns | |||
| QRM | 4.6 | C | |||
| IRM | IF = 75A, -di/dt = 300A/s | 48.4 | A | ||
| Outline (SOT-227B) | |||||
| Characteristic Values (TJ = 25C, Unless Otherwise Specified) | |||||
| gfs | VDS = 10V, ID = 60A, Note 1 | 56 | 88 | S | |
| RG | Gate Input Resistance | 0.57 | |||
| Ciss | 21.0 | nF | |||
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | 12.5 | nF | ||
| Crss | 42 | pF | |||
| Co(er) | Effective Output Capacitance | 600 | pF | ||
| Co(tr) | Time related | 2800 | pF | ||
| td(on) | Resistive Switching Times | 55 | ns | ||
| tr | VGS = 10V, VDS = 0.5 VDSS, ID = 75A | 30 | ns | ||
| td(off) | RG = 1 (External) | 100 | ns | ||
| tf | 13 | ns | |||
| Qg(on) | 355 | nC | |||
| Qgs | VGS = 10V, VDS = 0.5 VDSS, ID = 75A | 130 | nC | ||
| Qgd | 110 | nC | |||
| RthJC | 0.12 | C/W | |||
| RthCS | 0.05 | C/W | |||
2411220358_Littelfuse-IXFN150N65X2_C7211711.pdf
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