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quality AEC Q101 Qualified NPN Transistor LRC S-LDTD143ELT1G with Built In Bias Resistors and RoHS Compliance factory
quality AEC Q101 Qualified NPN Transistor LRC S-LDTD143ELT1G with Built In Bias Resistors and RoHS Compliance factory

AEC Q101 Qualified NPN Transistor LRC S-LDTD143ELT1G with Built In Bias Resistors and RoHS Compliance

Key Attributes
Model Number: S-LDTD143ELT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LDTD143ELT1G
Package:
SOT-23
Product Description

Product Overview

The LDTD143ELT1G and S-LDTD143ELT1G are NPN Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices simplify circuit design by incorporating built-in bias resistors, eliminating the need for external components. The thin-film resistors offer complete isolation for positive input biasing and minimize parasitic effects. Designed for ease of operation, only on/off conditions need to be set. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control requirements. These transistors are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Certifications: AEC-Q101 qualified and PPAP capable (S-prefix models)
  • Package Type: SOT23 (TO-236)

Technical Specifications

Parameter Symbol Limits Unit Notes
Maximum Ratings (Ta = 25C)
CollectorEmitter Voltage VCEO 50 V
CollectorBase Voltage VCBO 50 V
Collector Current IC 500 mA
Total Device Dissipation, FR5 Board PD 225 mW @ TA = 25C
Derate above 25C 1.8 mW/C
Thermal Resistance, JunctiontoAmbient RJA 556 C/W (Note 1)
Junction and Storage Temperature TJ,Tstg 55+150 C
Electrical Characteristics (Ta= 25C)
CollectorEmitter Breakdown Voltage VBR(CEO) 50 V (IC = 2.0 mA, IB = 0)
CollectorBase Breakdown Voltage VBR(CBO) 50 V (IC = 10 A, IE = 0)
Collector-Base Cutoff Current ICBO - 100 nA (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current ICEO - 1 A (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current IEBO - 1.8 A (VEB = 5.0 V, IC = 0)
DC Current Gain HFE 47 - (IC = 50 mA, VCE = 5 V)
CollectorEmitter Saturation Voltage VCE(sat) 0.3 V (IC = 50 mA, IB = 2.5 mA)
Output Voltage (on) VOL 0.3 V (VCC = 5.0 V, VB = 3 V, RL =1.0K)
Output Voltage (on) VOH - V (VCC = 5.0 V, VB = 0.5 V, RL =1.0K)
Input Resistor R1 4.7 K Typ.
Resistor Ratio R1/R2 1 - Typ.
Input Voltage (off) Vi(off) 0.5 V (VCE = 5.0 V, IC = 100 A)
Input Voltage (on) Vi(on) 3 V (VCE = 0.3 V, IC = 20 mA)
Device Marking and Ordering Information
Model Device Marking R1(K) R2(K) Shipping
LDTD143ELT1G E6 4.7 4.7 3000/Tape&Reel
S-LDTD143ELT1G E6 4.7 4.7 3000/Tape&Reel
LDTD143ELT3G E6 4.7 4.7 10000/Tape&Reel
Outline and Dimensions
Package DIM (mm) MIN NOR MAX
SOT-23 A 0.89 - 1.12
A1 0.01 - 0.10
A2 0.88 0.95 1.02
b 0.30 - 0.50
b1 0.30 0.40 0.45
c 0.08 - 0.20
c1 0.08 0.10 0.16
D 2.80 2.90 3.04
E 2.10 - 2.64
E1 1.20 1.30 1.40
e 0.95BSC - -
e1 1.90BSC - -

Applications

  • Inverter
  • Interface
  • Driver

2409302136_LRC-S-LDTD143ELT1G_C22381724.pdf

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