Depletion Mode MOSFET N Channel Littelfuse IXTH16N20D2 for High Power Density and Circuit Protection
Key Attributes
Model Number:
IXTH16N20D2
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
-
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
607pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
5.5nF@25V
Gate Charge(Qg):
-
Mfr. Part #:
IXTH16N20D2
Package:
TO-247
Product Description
IXTT16N20D2 / IXTH16N20D2 Depletion Mode MOSFET N-Channel
This N-Channel Depletion Mode MOSFET offers a "Normally ON" mode, making it suitable for various applications requiring easy mounting, space savings, and high power density. It is designed for use in audio amplifiers, start-up circuits, protection circuits, ramp generators, current regulators, and active loads.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patent information)
- Material: Molding Epoxies Meet UL 94 V-0 Flammability Classification
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Maximum Ratings | |||||
| VDSX | TJ = 25C to 150C | 200 | V | ||
| VDGX | TJ = 25C to 150C, RGS = 1M | 200 | V | ||
| VGSX Continuous | 20 | V | |||
| VGSM Transient | 30 | V | |||
| PD | TC = 25C | 695 | W | ||
| TJ | -55 | +150 | C | ||
| TJM | 150 | C | |||
| Tstg | -55 | +150 | C | ||
| TL | Maximum Lead Temperature for Soldering 300 C | C | |||
| TSOLD | 1.6 mm (0.062in.) from Case for 10s | 260 | C | ||
| Md | Mounting Torque (TO-247) | 1.13 | Nm/lb.in. | ||
| Weight | TO-268 | 4 | g | ||
| Weight | TO-247 | 6 | g | ||
| Characteristic Values (TJ = 25C, Unless Otherwise Specified) | |||||
| BVDSX | VGS = - 5V, ID = 250A | 200 | V | ||
| VGS(off) | VDS = 25V, ID = 4mA | -2.0 | -4.5 | V | |
| IGSX | VGS = 20V, VDS = 0V | 100 | nA | ||
| IDSX(off) | VDS = VDSX, VGS = - 5V | 5 | A | ||
| IDSX(off) | TJ = 125C | 100 | A | ||
| RDS(on) | VGS = 0V, ID = 8A, Note 1 | 80 | m | ||
| ID(on) | VGS = 0V, VDS = 25V, Note 1 | 16 | A | ||
| gfs | VDS = 20V, ID = 8A, Note 1 | 7 | 12 | S | |
| Ciss | VGS = -10V, VDS = 25V, f = 1MHz | 5500 | pF | ||
| Coss | 1360 | pF | |||
| Crss | 607 | pF | |||
| td(on) | 46 | ns | |||
| tr | 130 | ns | |||
| td(off) | 270 | ns | |||
| tf | 135 | ns | |||
| Qg(on) | 208 | nC | |||
| Qgs | VGS = + 5V, VDS = 100V, ID = 8A | 28 | nC | ||
| Qgd | 110 | nC | |||
| RthJC | 0.18 | C/W | |||
| RthCS | TO-247 | 0.21 | C/W | ||
| Safe-Operating-Area Specification | |||||
| SOA | VDS = 200V, ID = 2.1A, TC = 75C, tp = 5s | 420 | W | ||
| Source-Drain Diode | |||||
| VSD | IF = 16A, VGS = -10V, Note 1 | 0.8 | 1.3 | V | |
| trr | IF = 8A, -di/dt = 100A/s | 265 | ns | ||
| IRM | VR = 100V, VGS = -10V | 14.3 | A | ||
| QRM | 1.9 | C | |||
| Resistive Switching Times | |||||
| VGS = + 5V, VDS = 100V, ID = 8A RG = 3.3 (External) | |||||
2411220042_Littelfuse-IXTH16N20D2_C6211512.pdf
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