LGE AO3401 P Channel MOSFET Offering High Power Dissipation and Low Gate Charge for PWM Applications
Key Attributes
Model Number:
AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@4A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
950pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9.5nC@15V
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description
AO3401 P-Channel 30V(D-S) MOSFET
The AO3401 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capabilities.
Product Attributes
- Lead free product
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | -4.2 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | -30 | A | |||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 104 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V, VDS=0V | 100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.7 | -1 | -1.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4.2A | 50 | 55 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 64 | 72 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-1A | 95 | 120 | m | |
| Forward Transconductance | gFS | VDS=-5V, ID=-4.2A | 10 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 950 | PF | |||
| Output Capacitance | Coss | 115 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, F=1.0MHz | 75 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-3.2A, VGS=-10V, RGEN=6 | 7 | nS | ||
| Turn-on Rise Time | tr | 3 | nS | |||
| Turn-Off Delay Time | td(off) | 30 | nS | |||
| Turn-Off Fall Time | tf | 12 | nS | |||
| Total Gate Charge | Qg | VDS=-15V, ID=-4A, VGS=-4.5V | 9.5 | nC | ||
| Gate-Source Charge | Qgs | 2 | nC | |||
| Gate-Drain Charge | Qg | 3 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V, IS=-1A | -1.2 | V | ||
2410121919_LGE-AO3401_C688915.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
