Low Leakage Current Fast Recovery Diode Littelfuse IXYS DHG10I1200PM in RoHS Compliant TO220FP Package
Key Attributes
Model Number:
DHG10I1200PM
Product Custom Attributes
Reverse Leakage Current (Ir):
15uA@1.2kV
Reverse Recovery Time (trr):
75ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.22V@10A
Current - Rectified:
10A
Mfr. Part #:
DHG10I1200PM
Package:
TO-220FP-2
Product Description
Product Overview
The DHG10I1200PM is a preliminary, high-performance Fast Recovery Diode from IXYS, featuring low loss and soft recovery characteristics. Designed as a single diode with a planar passivated chip, it offers very low leakage current, very short recovery time, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and lower turn-on losses in commutating switches, making it suitable for applications requiring low EMI/RFI. This diode is rated for avalanche voltage for reliable operation and is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, or freewheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). It comes in a RoHS compliant TO-220FP package with isolation voltage of 2500 V~.
Product Attributes
- Brand: IXYS
- Package: TO-220FP
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Backside: isolated
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| Part number | DHG10I1200PM | |||||
| RRM | V | 1200 | ||||
| FAV | A | 10 | ||||
| rr | reverse recovery time | IF = 10 A; T = 25C VJ; -di/dt = 350 A/s | ns | 75 | ||
| IRM | max. reverse recovery current | IF = 10 A; T = 25C VJ; -di/dt = 350 A/s | A | |||
| VRRM | max. repetitive reverse blocking voltage | T = 25C VJ | V | 1200 | ||
| VRSM | max. non-repetitive reverse blocking voltage | T = 25C VJ | V | 1200 | ||
| I R | reverse current, drain current | VR = 1200 V; T = 25C VJ | A | 1.2 | ||
| VF | forward voltage drop | IF = 10 A; T = 25C VJ | V | 2.22 | ||
| VF0 | threshold voltage | V | 1.09 | |||
| rF | slope resistance for power loss calculation only | m | 94 | |||
| Ptot | total power dissipation | T = 25C C | W | 30 | ||
| thJC | thermal resistance junction to case | K/W | 2.92 | |||
| thCH | thermal resistance case to heatsink | K/W | 0.50 | |||
| CJ | junction capacitance | VJ = 600 V; T = 25C VJ; f = 1 MHz | pF | 30 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; T = 45C VJ | A | 65 | ||
| FAV | average forward current | d = rectangular 0.5 | A | 1200 | ||
| Isolation Voltage | t = 1 second | V~ | 2500 | |||
| Isolation Voltage | t = 1 minute | V~ | 2100 | |||
| Tj | virtual junction temperature | C | 150 | -55 | ||
| Tstg | storage temperature | C | 150 | -55 | ||
| Weight | g | 0.6 | ||||
| Mounting torque | Nm | 0.4 | ||||
| Mounting force with clip | N | 20 | ||||
| Dimensions (TO-220FP) | Millimeters (Inches) | min | max | |||
| A | mm | 4.50 (0.177) | 4.90 (0.193) | |||
| A1 | mm | 2.34 (0.092) | 2.74 (0.108) | |||
| A2 | mm | 2.56 (0.101) | 2.96 (0.117) | |||
| b | mm | 0.70 (0.028) | 0.90 (0.035) | |||
| b1 | mm | 1.27 (0.050) | 1.47 (0.058) | |||
| c | mm | 0.45 (0.018) | 0.60 (0.024) | |||
| D | mm | 15.67 (0.617) | 16.07 (0.633) | |||
| d1 | mm | 0 (0) | 1.10 (0.043) | |||
| E | mm | 9.96 (0.392) | 10.36 (0.408) | |||
| e | 2.54 BSC | mm | 0.100 BSC | |||
| H | mm | 6.48 (0.255) | 6.88 (0.271) | |||
| L | mm | 12.68 (0.499) | 13.28 (0.523) | |||
| L1 | mm | 3.03 (0.119) | 3.43 (0.135) | |||
| P | mm | 3.08 (0.121) | 3.28 (0.129) | |||
| Q | mm | 3.20 (0.126) | 3.40 (0.134) |
2410121814_Littelfuse-IXYS-DHG10I1200PM_C497165.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
