Load switch and PWM application P Channel MOSFET featuring low gate voltage LGE KI2301 with excellent RDS
Key Attributes
Model Number:
KI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
64mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
3.3nC@10V
Mfr. Part #:
KI2301
Package:
SOT-23
Product Description
Product Overview
The KI2301 is a P-Channel MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 2.5V, making it suitable for load switch and PWM applications. This device offers high power and current handling capability and is lead-free.
Product Attributes
- Brand: LGE Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead-free product acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | -24 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | - | - | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.4 | -0.7 | -1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | - | 64 | 110 | m |
| VGS=-2.5V, ID=-2A | - | 89 | 140 | m | ||
| Forward Transconductance | gFS | VDS=-5V,ID=-2.8A | - | 9.5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | - | 405 | - | PF | |
| Output Capacitance | Coss | - | 75 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V, F=1.0MHz | - | 55 | - | PF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10 | - | 11 | - | nS |
| Turn-on Rise Time | tr | - | 35 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 30 | - | nS | |
| Turn-Off Fall Time | tf | - | 10 | - | nS | |
| Total Gate Charge | Qg | VDS=-10V,ID=-3A, VGS=-2.5V | - | 3.3 | 12 | nC |
| Gate-Source Charge | Qgs | - | 0.7 | - | nC | |
| Gate-Drain Charge | Qg | - | 1.3 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1.3A | - | - | -1.2 | V |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | -20 | - | V | |
| Gate-Source Voltage | VGS | - | 12 | - | V | |
| Drain Current-Continuous | ID | - | -3 | - | A | |
| Drain Current -Pulsed | IDM | (Note 1) | - | -10 | - | A |
| Maximum Power Dissipation | PD | - | 1 | - | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Ambient | RJA | (Note 2) | - | 125 | - | /W |
2410010204_LGE-KI2301_C688914.pdf
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