Surface mount thyristor Littelfuse MCR8DSMT4G offering performance in motor control and process control
Key Attributes
Model Number:
MCR8DSMT4G
Product Custom Attributes
Holding Current (Ih):
6mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.8V
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
600V
SCR Type:
-
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+110℃
Mfr. Part #:
MCR8DSMT4G
Package:
TO-252(DPAK)
Product Description
Product Overview
The MCR8DSM and MCR8DSN are surface-mount thyristors designed for high-volume, low-cost industrial and consumer applications. They offer features such as small size, passivated die for reliability, low-level triggering, and availability in two package styles. These devices are suitable for motor control, process control, and temperature, light, and speed control applications.
Product Attributes
- Brand: Littelfuse
- Origin: Not specified
- Material: Epoxy Meets UL 94 V-0 @ 0.125 in
- Certifications: ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400V
- Pb-Free Packages: Available
Technical Specifications
| Rating | Symbol | MCR8DSM | MCR8DSN | Unit | Notes |
| Peak Repetitive OffState Voltage | VDRM, VRRM | 600 | 800 | V | TJ=-40 to 110C, Sine Wave, 50 to 60 Hz |
| On-State RMS Current | IT (RMS) | 8.0 | A | 180 Conduction Angles; TC = 90C | |
| Average OnState Current | IT(AV) | 5.1 | A | 180 Conduction Angles; TC = 90C | |
| Peak Non-Repetitive Surge Current | ITSM | 90 | A | 1/2 Cycle, Sine Wave 60 Hz, TJ = 110C | |
| Circuit Fusing Consideration | I2t | 34 | Asec | t = 8.3 ms | |
| Forward Peak Gate Power | PGM | 5.0 | W | Pulse Width 10 sec, TC = 90C | |
| Forward Average Gate Power | PGM (AV) | 0.5 | W | t = 8.3 msec, TC = 90C | |
| Forward Peak Gate Current | IGM | 2.0 | A | Pulse Width 10 sec, TC= 90C | |
| Operating Junction Temperature Range | TJ | -40 to 110 | C | ||
| Storage Temperature Range | Tstg | -40 to 150 | C | ||
| Thermal Resistance, JunctiontoCase | RJC | 2.2 | C/W | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 88 | C/W | Surface mounted on minimum recommended pad size. | |
| Thermal Resistance, JunctiontoAmbient | RJA | 80 | C/W | Note 2 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | C | 1/8" from Case for 10 Seconds | |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | 10 | A | VAK = Rated VDRM or VRRM, RGK = 1.0 k, TJ = 25C | |
| Peak Repetitive Forward or Reverse Blocking Current | IDRM, IRRM | 500 | A | VAK = Rated VDRM or VRRM, RGK = 1.0 k, TJ = 110C | |
| Peak Reverse Gate Blocking Voltage | VGRM | 10 to 18 | V | IGR = 10 A | |
| Peak Reverse Gate Blocking Current | IRGM | 1.2 | A | VGR = 10 V | |
| Peak Forward OnState Voltage | VTM | 1.4 to 1.8 | V | ITM = 16 A (Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%) | |
| Gate Trigger Current (Continuous dc) | IGT | 5.0 to 300 | A | VAK = 12 Vdc, RL = 100 , RGK current not included. TJ = 25C (5.0 A), TJ = -40C (200 A) | |
| Gate Trigger Voltage (Continuous dc) | VGT | 0.45 to 1.5 | V | VD = 12 V, RL = 100 , RGK current not included. TJ = 25C (0.65 V), TJ = -40C (1.0 V), TJ = 110C (1.5 V) | |
| Holding Current | IH | 0.5 to 10 | mA | VD = 12 V, Initiating Current = 200 mA, RGK = 1 k. TJ = 25C (1.0 mA), TJ = -40C (6.0 mA), TJ = 110C (10 mA) | |
| Latching Current | IL | 0.5 to 10 | mA | VD = 12 V, IG = 2.0 mA, RGK = 1 k. TJ = 25C (1.0 mA), TJ = -40C (6.0 mA), TJ = 110C (10 mA) | |
| Total TurnOn Time | tgt | 2.0 to 5.0 | s | Source Voltage = 12 V, RS = 6.0 k, IT = 16 A(pk), RGK = 1.0 k, VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s | |
| Critical Rate of Rise of OffState Voltage | dv/dt | 2.0 to 10 | V/s | VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 k, TJ = 110C | |
2411111323_Littelfuse-MCR8DSMT4G_C5362458.pdf
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