triac component LGE BTB16-600B suitable for temperature control motor speed and dimming applications
Key Attributes
Model Number:
BTB16-600B
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB16-600B
Package:
TO-220
Product Description
BTA16/BTB16 Series Triacs
The BTA16/BTB16 Triacs feature a planar, glass-passivated PN junction with a highly reliable dv/dt characteristic. These devices are suitable for applications such as temperature control, dimming, and motor speed control.
Product Attributes
- Brand: LG SEMI (implied by URL and email)
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
| MAIN CHARACTERISTICS | ||||
| RMS on-state current | IT(RMS) | 16 | A | TC=86 (full sine wave) |
| Non repetitive surge peak on-state current | ITSM | 160 | A | F=50HZ ,t=20ms |
| I2t value for fusing | I2t | 144 | As | TP=10ms |
| Critical rate of rise of on-state current | di/dt | 50 | A/s | F=120HZ,Tj=125 |
| Peak gate current | IGM | 4 | A | TP=20s,Tj=125 |
| Average gate power dissipation | PG(AV) | 1 | W | Tj=125 |
| Storage junction temperature range | Tstg | -40-+150 | ||
| Operating junction temperature range | Tj | -40-+125 | ||
| ELECTRICAL CHARACTERISTICS (3 quadrants) | ||||
| Gate trigger current | IGT | ≤10 (SW) / ≤35 (CW) / ≤50 (BW) | mA | VD=12V, I T=0.1A (Quadrant I~III) |
| Gate trigger voltage | VGT | ≤1.5 | V | VD=12V, I T=0.1A |
| Holding current | IH | ≤15 (SW) / ≤25 (CW) / ≤60 (BW) | mA | VD=12V, I T=0.1A |
| Latching current | IL | ≤50 | mA | |
| Rise of off- state voltage | dv/dt | ≥40 (SW) / ≥500 (CW) / ≥1000 (BW) | V/S | VD=67%VDRM, IT=22A |
| Peak on-state voltage | VTM | ≤1.65 | V | IT=22A |
| Peak repetitive forward blocking current | IDRM/IRRM | ≤5 (≤2 @ Tj=125) | μA | VRRM=VDRM, Tj=25 |
| ELECTRICAL CHARACTERISTICS (4 quadrants) | ||||
| Gate trigger current | IGT | ≤25 (C) / ≤50 (B) | mA | VD=12V, IT=0.1A (Quadrant I~III) |
| Gate trigger voltage | VGT | ≤1.5 | V | VD=12V, IT=0.1A |
| Holding current | IH | ≤25 (C) / ≤50 (B) | mA | VD=12V, IT=0.1A |
| Latching current | IL | ≤40 (I-III-IV) / ≤80 (II) | mA | VD=12V, IT=0.1A |
| Rise of off- state voltage | dv/dt | ≥200 (C) / ≥400 (B) | V/S | VD=67%VDRM, IT=22A |
| Peak on-state voltage | VTM | ≤1.6 | V | IT=22A |
| Peak repetitive forward blocking current | IDRM/IRRM | ≤5 (≤1 @ Tj=125) | μA | VRRM=VDRM, Tj=25 |
| THERMAL RESISTANCES | ||||
| Junction to case (AC) | Rth(j-c) | 1.2 (TO-220B) / 2.1 (TO-220A Insulated) | /W | |
| Junction to ambient | Rth(j-a) | 60 (TO-220A Insulated) | /W | |
2411261516_LGE-BTB16-600B_C22388883.pdf
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