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quality 12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications factory
quality 12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications factory

12A Triac Semiconductor Device LGE BT138-600E-LGE Suitable for Inductive Load Switching Applications

Key Attributes
Model Number: BT138-600E-LGE
Product Custom Attributes
Mfr. Part #:
BT138-600E-LGE
Package:
TO-220AB
Product Description

Product Overview

The LGE BT138 series are 12A, 3 & 4 quadrant Triacs designed for inductive load switching and ON/OFF function applications. These silicon bidirectional devices feature singlesided trenching technology, mesa glass passivation, and multi-layer metallized electrodes for high blocking voltage and temperature stability. They are suitable for use in washing machines, induction motor starting circuits, vacuum cleaners, power tools, and motor speed control, heating regulation, and solid-state relay applications.

Product Attributes

  • Brand: LGE
  • Moisture Sensitivity: MSL Level 1, per J-STD-020
  • Terminals: Matte Tin Finish
  • Solderable per MIL-STD-202 Method 208
  • Case Material: Molded Plastic
  • Molding compound meet UL Flammability Classification Rating 94V-0
  • Case: JEDEC TO-220AB, ITO-220AB, TO-263

Technical Specifications

ParameterSymbolBT138-600BT138-800Units
MAXIMUM RATING
R.M.S. On-State Current @ Tc=110IT(RMS)1212A
Non-Repetitive Surge Peak On-State Current (f=50Hz, T=20ms)ITSM120120A
Non-Repetitive Surge Peak On-State Current (f=60Hz, T=16.7ms)ITSM115115A
I2t Value for Fusing (tp=10ms)I2t7272A2s
Critical Rate of Rise of On-State Current (IG=2IGT, tr100ns, F=120Hz, Tj=125)di/dt5050A/s
Repetitive peak Off-State voltage @ Tj=25VDRM/VRRM600800V
Non repetitive surge peak off-state voltage (tp=10ms, Tj=25)VDSM/VRSMVDRM/VRRM+100VDRM/VRRM+100V
Peak Gate Current (tp=20s, Tj=125)IGM44A
Average Gate Power Dissipation (Tj=125)PG(AV)11W
Typical Thermal Resistance (Junction to Ambient) TO-220AB/TO-263RJA6060/W
Typical Thermal Resistance (Junction to Ambient) TO-220AB InsulatedRJA4545/W
Typical Thermal Resistance (Junction to Ambient) TO-220F InsulatedRJA6060/W
Typical Thermal Resistance (Junction to Case (AC)) TO-220AB/TO-263RJC1.21.2/W
Typical Thermal Resistance (Junction to Case (AC)) TO-220AB InsulatedRJC2.12.1/W
Typical Thermal Resistance (Junction to Case (AC)) TO-220F InsulatedRJC2.52.5/W
Maximum Operating Junction temperatureTJ-40~+125-40~+125
Storage temperature rangeTSTG-40~+150-40~+150
ELECTRICAL CHARACTERISTICS ( QUADRANTS)
Gate Trigger Current (VD=12V,RL=100)IGTSW=10, CW=35, BW=50SW=10, CW=35, BW=50mA
Gate Trigger VoltageVGT1.31.3V
Gate Non-Trigger Voltage (Tj=125)VGD0.20.2V
Holding Current (IT=0.5A)IHSW=10, CW=40, BW=60SW=10, CW=40, BW=60mA
Latching Current (IG=1.2IGT) quadrantILSW=30, CW=50, BW=70SW=30, CW=50, BW=70mA
Latching Current (IG=1.2IGT) quadrantILSW=40, CW=60, BW=80SW=40, CW=60, BW=80mA
Critical Rate of Rise of Off-State Voltage (VD=2/3VDRM,Tj=125)dv/dtSW=200, CW=500, BW=1000SW=200, CW=500, BW=1000V/s
Critical Rate of Rise of Off-State Voltage at Commutation (Tj=125)(dv/dt)c88V/s
ELECTRICAL CHARACTERISTICS ( QUADRANTS)
Gate Trigger Current (VD=12V,RL=100)IGTD=5, E=10, F=25, G=50 (-) D=10, E=25, F=70, G=100 ()D=5, E=10, F=25, G=50 (-) D=10, E=25, F=70, G=100 ()mA
Gate Trigger VoltageVGT1.31.3V
Gate Non-Trigger Voltage (Tj=125)VGD0.20.2V
Holding Current (IT=0.5A)IHD=10, E=20, F=40, G=60D=10, E=20, F=40, G=60mA
Latching Current (IG=1.2IGT) quadrantILD=10, E=30, F=50, G=70D=10, E=30, F=50, G=70mA
Latching Current (IG=1.2IGT) quadrantILD=20, E=40, F=70, G=100D=20, E=40, F=70, G=100mA
Critical Rate of Rise of Off-State Voltage (VD=2/3VDRM,Tj=125)dv/dtD=20, E=50, F=100, G=200D=20, E=50, F=100, G=200V/s
Critical Rate of Rise of Off-State Voltage at Commutation (Tj=125)(dv/dt)c1010V/s
STATIC CHARACTERISTICS
Peak On-State Voltage (ITM=32A,Tj=25)VTM1.601.60V
Threshold Voltage (Tj=125)VTO0.870.87V
Dynamic Resistance (Tj=125)Rd36.636.6m
Repetitive Peak Off-Statte Current (VDRM=VRRM, Tj=25)IDRM55A
Repetitive Peak Off-Statte Current (VDRM=VRRM, Tj=125)IRRM11mA

2511181950_LGE-BT138-600E-LGE_C52766542.pdf

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