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quality N Channel Enhancement Mode Avalanche Rated Power MOSFET Littelfuse IXTT36N50P Designed for High Voltage Switching factory
quality N Channel Enhancement Mode Avalanche Rated Power MOSFET Littelfuse IXTT36N50P Designed for High Voltage Switching factory

N Channel Enhancement Mode Avalanche Rated Power MOSFET Littelfuse IXTT36N50P Designed for High Voltage Switching

Key Attributes
Model Number: IXTT36N50P
Product Custom Attributes
Mfr. Part #:
IXTT36N50P
Package:
TO-268AA
Product Description

IXYS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

This high-performance N-Channel Enhancement Mode Avalanche Rated Power MOSFET is designed for demanding applications. It features international standard packages, Unclamped Inductive Switching (UIS) rating, and low package inductance for ease of driving and protection. Available in TO-247, TO-268, PLUS220, and TO-3P packages.

Product Attributes

  • Brand: IXYS
  • Product Line: PolarHVTM
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Rating: Avalanche Rated

Technical Specifications

Symbol Test Conditions Min. Typ. Max. Units
Maximum Ratings
VDSS TJ = 25 C to 150 C 500 V
VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V
VGS Continuous 30 V
VGSM Transient 40 V
ID25 TC = 25 C 36 A
IDM TC = 25 C, pulse width limited by TJM 108 A
IAR TC = 25 C 36 A
EAR TC = 25 C 50 mJ
EAS TC = 25 C 1.5 J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/ns
PD TC = 25 C 540 W
TJ -55 +150 C
TJM 150 C
Tstg -55 +150 C
TL 1.6 mm (0.062 in.) from case for 10 s 300 C
TSOLD Plastic body for 10 s 260 C
Md Mounting torque(TO-247) 1.13/10 Nm/lb.in.
FC Mounting force (PLUS220) 20..120 N/lb.in.
Weight TO-247 6 g
Weight TO-268 5 g
Weight PLUS220 2 g
Weight TO-3P 5.5 g
Characteristic Values (TJ = 25 C unless otherwise specified)
VDSS VGS = 0 V, ID = 250 A 500 V
VGS(th) VDS = VGS, ID = 250 A 3.0 5.0 V
IGSS VGS = 30 VDC, VDS = 0 100 nA
IDSS VDS = VDSS, VGS = 0 V 25 A
IDSS TJ = 125 C 250 A
RDS(on) VGS = 10 V, ID = 0.5 ID25 170 m
gfs VDS= 20 V; ID = 0.5 ID25, pulse test 23 36 S
Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 5500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 510 pF
Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 40 pF
td(on) VGS = 10 V, VDS = 0.5 VDSS, ID = ID25, RG = 3 (External) 25 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25, RG = 3 (External) 27 ns
td(off) VGS = 10 V, VDS = 0.5 VDSS, ID = ID25, RG = 3 (External) 75 ns
tf VGS = 10 V, VDS = 0.5 VDSS, ID = ID25, RG = 3 (External) 21 ns
Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 85 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 nC
Qgd VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 31 nC
RthJC 0.23 C/W
RthCS (TO-247 and TO-3P) 0.21 C/W
RthCS (PLUS220) 0.21 C/W
Source-Drain Diode Characteristic Values (TJ = 25 C unless otherwise specified)
IS VGS = 0 V 36 A
ISM Repetitive 108 A
VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V
trr IF = 25 A, -di/dt = 100 A/s, VR = 100 V, VGS = 0 V 400 ns

2411220042_Littelfuse-IXTT36N50P_C7291032.pdf

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