Low Gate Charge Silicon Carbide MOSFET Littelfuse LSIC1MO170T0750 Rated MSL 1 and RoHS Compliant Device
Product Overview
The LSIC1MO170T0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET designed for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for enhanced switching performance, and normally-off operation across all temperatures. Optimized for demanding applications, it offers an enhanced package with a separate driver source pin and improved creepage. This RoHS compliant, lead-free, and halogen-free device is MSL 1 rated.
Product Attributes
- Brand: Littelfuse
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant, Lead-free, Halogen-free, MSL 1 Rated
Technical Specifications
| Characteristic | Symbol | Conditions | Value | Unit | ||
| Drain-Source Voltage | VDS | VGS = 0 V | 1700 | V | ||
| Typical RDS(ON) | RDS(ON) | ID = 2 A, VGS = 20 V | 750 | mOhm | ||
| Continuous Drain Current | ID | VGS = 20 V, TC = 25 C | 6.4 | A | ||
| Continuous Drain Current | ID | VGS = 20 V, TC = 100 C | 4.5 | A | ||
| Pulsed Drain Current | ID(pulse) | TC = 25 C | 11 | A | ||
| Power Dissipation | PD | TC = 25 C, TJ = 175 C | 65 | W | ||
| Gate-Source Voltage (Absolute Maximum) | VGS,MAX | Steady state | 6 to +22 | V | ||
| Gate-Source Voltage (Absolute Maximum) | VGS,OP,TR | Transient, ttransient < 300 nsec | 10 to +25 | V | ||
| Gate-Source Voltage (Recommended DC) | VGS,OP | 5 to +20 | V | |||
| Operating Junction Temperature | TJ | -55 to +175 | C | |||
| Storage Temperature | TSTG | -55 to +150 | C | |||
| Lead Temperature for Soldering (MSL1 Rated) | TSOLD | 260 | C | |||
| ESD Sensitivity Rating (HBM) | 250 | V | ||||
| ESD Sensitivity Rating (CDM) | 1000 | V | ||||
| Maximum Thermal Resistance, junction-to-case | Rth,JC,MAX | 2.3 | C/W | |||
| Maximum Thermal Resistance, junction-to-ambient | Rth,JA,MAX | 40 | C/W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 100 A | 1700 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 1700, VGS = 0 V | <1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 1700 V, VGS = 0 V, TJ = 175 C | <1 | A | ||
| Gate Leakage Current | IGSS,F | VGS = 22 V, VDS = 0 V | - | 100 | nA | |
| Gate Leakage Current | IGSS,R | VGS = 6 V, VDS = 0 V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON) | ID = 2 A, VGS = 20 V, TJ = 175 C | 1550 | mOhm | ||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 1 mA | 1.8 | 2.8 | 4.0 | V |
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 1 mA, TJ = 175 C | 1.9 | - | - | V |
| Gate Resistance | RG | Resonance method, Drain-Source shorted | - | 29 | - | Ohm |
| Turn-On Switching Energy | EON | VDD = 1200 V, ID = 2 A, VGS = 5 / +20 V, RG,ext = 2 , L = 1.4 mH, FWD = LSIC1MO170T0750 | 80 | uJ | ||
| Turn-Off Switching Energy | EOFF | 43 | uJ | |||
| Total Per-Cycle Switching Energy | ETS | 123 | uJ | |||
| Input Capacitance | CISS | VDD = 1000 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV | 200 | pF | ||
| Output Capacitance | COSS | 11.5 | pF | |||
| Reverse Transfer Capacitance | CRSS | 1.7 | pF | |||
| COSS Stored Energy | EOSS | 5.7 | J | |||
| Total Gate Charge | Qg | VDD = 1200 V, ID = 2 A, VGS = 5 / +20 V | 11 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qg d | 5 | nC | |||
| Turn-On Delay Time | td(on) | VDD = 1200 V, VGS = 5 / +20 V, ID = 2 A, RG,ext = 2 , RL = 600 , Timing relative to VDS | 8 | ns | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(off) | 27 | ns | |||
| Fall Time | tf | 173 | ns | |||
| Diode Forward Voltage | VSD | IS = 1 A, VGS = 5 V | 4.2 | V | ||
| Diode Forward Voltage | VSD | IS = 1 A, VGS = 5 V, TJ = 175 C | 3.6 | V | ||
| Continuous Diode Forward Current | IS | VGS = 5 V, TC = 25 C | 9 | A | ||
| Peak Diode Forward Current | ISP | 11 | A |
2411272142_Littelfuse-LSIC1MO170T0750_C3281638.pdf
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