Low Gate Charge Silicon Carbide MOSFET Littelfuse LSIC1MO170T0750 Rated MSL 1 and RoHS Compliant Device

Key Attributes
Model Number: LSIC1MO170T0750
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
-
Type:
N-Channel
Pd - Power Dissipation:
65W
Mfr. Part #:
LSIC1MO170T0750
Package:
TO-263-7
Product Description

Product Overview

The LSIC1MO170T0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET designed for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for enhanced switching performance, and normally-off operation across all temperatures. Optimized for demanding applications, it offers an enhanced package with a separate driver source pin and improved creepage. This RoHS compliant, lead-free, and halogen-free device is MSL 1 rated.

Product Attributes

  • Brand: Littelfuse
  • Material: Silicon Carbide (SiC)
  • Certifications: RoHS compliant, Lead-free, Halogen-free, MSL 1 Rated

Technical Specifications

CharacteristicSymbolConditionsValueUnit
Drain-Source VoltageVDSVGS = 0 V1700V
Typical RDS(ON)RDS(ON)ID = 2 A, VGS = 20 V750mOhm
Continuous Drain CurrentIDVGS = 20 V, TC = 25 C6.4A
Continuous Drain CurrentIDVGS = 20 V, TC = 100 C4.5A
Pulsed Drain CurrentID(pulse)TC = 25 C11A
Power DissipationPDTC = 25 C, TJ = 175 C65W
Gate-Source Voltage (Absolute Maximum)VGS,MAXSteady state6 to +22V
Gate-Source Voltage (Absolute Maximum)VGS,OP,TRTransient, ttransient < 300 nsec10 to +25V
Gate-Source Voltage (Recommended DC)VGS,OP5 to +20V
Operating Junction TemperatureTJ-55 to +175C
Storage TemperatureTSTG-55 to +150C
Lead Temperature for Soldering (MSL1 Rated)TSOLD260C
ESD Sensitivity Rating (HBM)250V
ESD Sensitivity Rating (CDM)1000V
Maximum Thermal Resistance, junction-to-caseRth,JC,MAX2.3C/W
Maximum Thermal Resistance, junction-to-ambientRth,JA,MAX40C/W
Drain-Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 100 A1700V
Zero Gate Voltage Drain CurrentIDSSVDS = 1700, VGS = 0 V<1A
Zero Gate Voltage Drain CurrentIDSSVDS = 1700 V, VGS = 0 V, TJ = 175 C<1A
Gate Leakage CurrentIGSS,FVGS = 22 V, VDS = 0 V-100nA
Gate Leakage CurrentIGSS,RVGS = 6 V, VDS = 0 V-100nA
Drain-Source On-State ResistanceRDS(ON)ID = 2 A, VGS = 20 V, TJ = 175 C1550mOhm
Gate Threshold VoltageVGS(TH)VDS = VGS, ID = 1 mA1.82.84.0V
Gate Threshold VoltageVGS(TH)VDS = VGS, ID = 1 mA, TJ = 175 C1.9--V
Gate ResistanceRGResonance method, Drain-Source shorted-29-Ohm
Turn-On Switching EnergyEONVDD = 1200 V, ID = 2 A, VGS = 5 / +20 V, RG,ext = 2 , L = 1.4 mH, FWD = LSIC1MO170T075080uJ
Turn-Off Switching EnergyEOFF43uJ
Total Per-Cycle Switching EnergyETS123uJ
Input CapacitanceCISSVDD = 1000 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV200pF
Output CapacitanceCOSS11.5pF
Reverse Transfer CapacitanceCRSS1.7pF
COSS Stored EnergyEOSS5.7J
Total Gate ChargeQgVDD = 1200 V, ID = 2 A, VGS = 5 / +20 V11nC
Gate-Source ChargeQgs4nC
Gate-Drain ChargeQg d5nC
Turn-On Delay Timetd(on)VDD = 1200 V, VGS = 5 / +20 V, ID = 2 A, RG,ext = 2 , RL = 600 , Timing relative to VDS8ns
Rise Timetr15ns
Turn-Off Delay Timetd(off)27ns
Fall Timetf173ns
Diode Forward VoltageVSDIS = 1 A, VGS = 5 V4.2V
Diode Forward VoltageVSDIS = 1 A, VGS = 5 V, TJ = 175 C3.6V
Continuous Diode Forward CurrentISVGS = 5 V, TC = 25 C9A
Peak Diode Forward CurrentISP11A

2411272142_Littelfuse-LSIC1MO170T0750_C3281638.pdf

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