Littelfuse IXYS MCC56-12IO1B Phase Leg Thyristor Module with TO-240AA Package and Isolated Backside
Key Attributes
Model Number:
MCC56-12IO1B
Product Custom Attributes
Holding Current (Ih):
200mA
Current - Gate Trigger(Igt):
100mA
Current - On State(It(RMS)):
100A
Peak Off - State Voltage(Vdrm):
1.2kV
SCR Type:
2 SCR
Gate Trigger Voltage (Vgt):
1.5V
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
MCC56-12IO1B
Package:
TO-240AA
Product Description
Product Overview
The MCC56-12io1B is a phase leg thyristor module featuring planar passivated chip technology for long-term stability. It utilizes a Direct Copper Bonded Al2O3-ceramic substrate and a DCB ceramic base plate, offering reduced weight and advanced power cycling capabilities. This module is designed for line frequency applications and is RoHS compliant.
Product Attributes
- Brand: IXYS
- Package: TO-240AA
- Certifications: RoHS compliant
- Backside: Isolated
- Chip: Planar passivated
- Base Plate: DCB ceramic
- Substrate: Direct Copper Bonded Al2O3-ceramic
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
| VRRM / VDRM | max. repetitive reverse/forward blocking voltage | V | 1200 | |||
| ITAV | RMS forward current | TAV 180 sine | A | 56 | ||
| IT(RMS) | RMS current | per terminal | A | 200 | ||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | kA | 1.62 | ||
| It | value for fusing | t = 10 ms; (50 Hz), sine; TVJ = 45C | kAs | 1.28 | ||
| VT0 | forward voltage drop | TVJ = 125C | V | 0.85 | ||
| rT | slope resistance for power loss calculation only | TVJ = 125C | m | 3.7 | ||
| RthJC | thermal resistance junction to case | K/W | 1.50 | |||
| Ptot | total power dissipation | TC = 25C | W | 222 | ||
| VISO | Isolation Voltage | t = 1 second | V~ | 4800 | ||
| TVJ | virtual junction temperature | C | 125 | |||
| Tstg | storage temperature | C | -40 | 125 | ||
| VGT | gate trigger voltage | VD = 6 V; TVJ = 25C | V | 0.5 | ||
| IGT | gate trigger current | VD = 6 V; TVJ = 25C | mA | 100 | ||
| VGD | gate non-trigger voltage | TVJ = 125C | V | 0.2 | ||
| IGD | gate non-trigger current | VD = VDRM; TVJ = 125C | mA | 10 | ||
| IL | latching current | TVJ = 25C | mA | 450 | ||
| IH | holding current | TVJ = 25C | mA | 200 | ||
| tq | turn-off time | IT = 60 A; TVJ = 150C; di/dt = 10 A/s; dv/dt = 20 V/s | s | 150 | ||
| (dv/dt)cr | critical rate of rise of voltage | TVJ = 125C; VR = ; method 1 (linear voltage rise) | V/s | 500 | ||
| (di/dt)cr | critical rate of rise of current | repetitive, TVJ = 125C; f = 50 Hz | A/s | 150 |
2411261546_Littelfuse-IXYS-MCC56-12IO1B_C17641181.pdf
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