LN2324DT2AG 20V N Channel MOSFET Featuring Trench Technology for Driver Circuits and Power Routing
Product Overview
The LN2324DT2AG and S-LN2324DT2AG are 20V N-Channel (D-S) MOSFETs designed for various power applications. They feature low RDS(ON) achieved through trench technology, low thermal impedance, and fast switching speeds. These devices are RoHS compliant and Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with specific control change requirements. Key applications include Power Routing, Level Shifting, and Driver Circuits.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Series: LN2324DT2AG, S-LN2324DT2AG
- Technology: Trench Technology
- Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix variant)
Technical Specifications
| Model | VDS (V) | RDS(ON) (m) at VGS=4.5V, IDS=10A | RDS(ON) (m) at VGS=2.5V, IDS=8A | Device Marking | Package | Ordering Information |
|---|---|---|---|---|---|---|
| LN2324DT2AG | 20 | 10.5 | 12.5 | LN2324DT2AG | DFN2020-6S | LN2324DT2AG (4000/Tape&Reel) |
| S-LN2324DT2AG | 20 | 10.5 | 12.5 | S-LN2324DT2AG | DFN2020-6S | S-LN2324DT2AG (4000/Tape&Reel) |
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Gate-Source Threshold Voltage | VGS(th) | - | - | 1.5 | V |
| Gate-Body Leakage | IGSS | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A |
| On-State Drain Current | ID(ON) | - | - | 20 | A |
| Drain-Source On-Resistance | RDS(ON) | - | 10.5 (VGS=4.5V, ID=10A) | - | m |
| Drain-Source On-Resistance | RDS(ON) | - | 12.5 (VGS=2.5V, ID=8A) | - | m |
| Forward Transconductance | gfs | - | 14 | - | S |
| Diode Forward Voltage | VSD | - | - | 1.2 | V |
| Total Gate Charge | Qg | - | 3.6 | - | nC |
| Gate-Source Charge | Qgs | - | 0.74 | - | nC |
| Gate-Drain Charge | Qgd | - | 0.4 | - | nC |
| Input Capacitance | Ciss | - | 1920 | - | pF |
| Output Capacitance | Coss | - | 143 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 16 | - | pF |
| Turn-On Delay Time | td(on) | - | 5 | - | ns |
| Turn-On Rise Time | tr | - | - | 24 | ns |
| Turn-Off Delay Time | td(off) | - | - | 20 | ns |
| Turn-Off Fall Time | tf | - | - | 12.5 | ns |
Thermal Characteristics
| Parameter | Symbol | Max. | Unit |
|---|---|---|---|
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | |
| Maximum Junction-to-Ambient (Note 1) | RJA | 90 (Steady State) | C/W |
| Maximum Junction-to-Ambient (Note 1) | RJA | 40 (t10S) | C/W |
Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Max. | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | 8 | V |
| Continuous Drain Current (Note 1) | ID | 11 (TA = 70) | A |
| Continuous Drain Current (Note 1) | ID | 20 (TA = 25) | A |
| Continuous Source Current (Diode Conduction)(Note 1) | IS | 3 (TA = 70) | A |
| Continuous Source Current (Diode Conduction)(Note 1) | IS | 2.9 (TA = 25) | A |
| Pulsed Drain Current(Note 2) | IDM | 60 | A |
| Power Dissipation(Note 1) | PD | 1.9 (TA = 70) | W |
| Power Dissipation(Note 1) | PD | 3 (TA = 25) | W |
Outline and Dimensions
| Dim | MIN | NOR | MAX | Unit |
|---|---|---|---|---|
| D | 1.95 | 2.00 | 2.05 | mm |
| E | 1.95 | 2.00 | 2.05 | mm |
| A | 0.60 | 0.65 | 0.70 | mm |
| A1 | 0.01 | 0.03 | 0.05 | mm |
| b | 0.25 | 0.30 | 0.35 | mm |
| e | - | 0.65TYP. | - | mm |
| L | 0.23 | 0.28 | 0.33 | mm |
| L1 | 0.60 | 0.65 | 0.65 | mm |
| D1 | 0.90 | 0.95 | 1.00 | mm |
1804172052_LRC-LN2324DT2AG_C172432.pdf
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