LN2324DT2AG 20V N Channel MOSFET Featuring Trench Technology for Driver Circuits and Power Routing

Key Attributes
Model Number: LN2324DT2AG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12.5mΩ@2.5V,8A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
3W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
LN2324DT2AG
Package:
DFN-6L(2x2)
Product Description

Product Overview

The LN2324DT2AG and S-LN2324DT2AG are 20V N-Channel (D-S) MOSFETs designed for various power applications. They feature low RDS(ON) achieved through trench technology, low thermal impedance, and fast switching speeds. These devices are RoHS compliant and Halogen Free. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with specific control change requirements. Key applications include Power Routing, Level Shifting, and Driver Circuits.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Series: LN2324DT2AG, S-LN2324DT2AG
  • Technology: Trench Technology
  • Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified and PPAP capable (S-prefix variant)

Technical Specifications

Model VDS (V) RDS(ON) (m) at VGS=4.5V, IDS=10A RDS(ON) (m) at VGS=2.5V, IDS=8A Device Marking Package Ordering Information
LN2324DT2AG 20 10.5 12.5 LN2324DT2AG DFN2020-6S LN2324DT2AG (4000/Tape&Reel)
S-LN2324DT2AG 20 10.5 12.5 S-LN2324DT2AG DFN2020-6S S-LN2324DT2AG (4000/Tape&Reel)

Electrical Characteristics (Ta = 25C)

Parameter Symbol Min. Typ. Max. Unit
Gate-Source Threshold Voltage VGS(th) - - 1.5 V
Gate-Body Leakage IGSS - - 100 nA
Zero Gate Voltage Drain Current IDSS - - 1 A
On-State Drain Current ID(ON) - - 20 A
Drain-Source On-Resistance RDS(ON) - 10.5 (VGS=4.5V, ID=10A) - m
Drain-Source On-Resistance RDS(ON) - 12.5 (VGS=2.5V, ID=8A) - m
Forward Transconductance gfs - 14 - S
Diode Forward Voltage VSD - - 1.2 V
Total Gate Charge Qg - 3.6 - nC
Gate-Source Charge Qgs - 0.74 - nC
Gate-Drain Charge Qgd - 0.4 - nC
Input Capacitance Ciss - 1920 - pF
Output Capacitance Coss - 143 - pF
Reverse Transfer Capacitance Crss - 16 - pF
Turn-On Delay Time td(on) - 5 - ns
Turn-On Rise Time tr - - 24 ns
Turn-Off Delay Time td(off) - - 20 ns
Turn-Off Fall Time tf - - 12.5 ns

Thermal Characteristics

Parameter Symbol Max. Unit
Operating Junction and Storage Temperature Range TJ, Tstg -55~+150
Maximum Junction-to-Ambient (Note 1) RJA 90 (Steady State) C/W
Maximum Junction-to-Ambient (Note 1) RJA 40 (t10S) C/W

Maximum Ratings (Ta = 25C)

Parameter Symbol Max. Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 8 V
Continuous Drain Current (Note 1) ID 11 (TA = 70) A
Continuous Drain Current (Note 1) ID 20 (TA = 25) A
Continuous Source Current (Diode Conduction)(Note 1) IS 3 (TA = 70) A
Continuous Source Current (Diode Conduction)(Note 1) IS 2.9 (TA = 25) A
Pulsed Drain Current(Note 2) IDM 60 A
Power Dissipation(Note 1) PD 1.9 (TA = 70) W
Power Dissipation(Note 1) PD 3 (TA = 25) W

Outline and Dimensions

Dim MIN NOR MAX Unit
D 1.95 2.00 2.05 mm
E 1.95 2.00 2.05 mm
A 0.60 0.65 0.70 mm
A1 0.01 0.03 0.05 mm
b 0.25 0.30 0.35 mm
e - 0.65TYP. - mm
L 0.23 0.28 0.33 mm
L1 0.60 0.65 0.65 mm
D1 0.90 0.95 1.00 mm

1804172052_LRC-LN2324DT2AG_C172432.pdf

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