86--136 6733 2386
quality High Current NPN Transistor LRC L8050QLT1G 0.8A Collector Current Epitaxial Planar SOT23 Package factory
quality High Current NPN Transistor LRC L8050QLT1G 0.8A Collector Current Epitaxial Planar SOT23 Package factory

High Current NPN Transistor LRC L8050QLT1G 0.8A Collector Current Epitaxial Planar SOT23 Package

Key Attributes
Model Number: L8050QLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
225mW
Type:
NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L8050QLT1G
Package:
SOT-23
Product Description

Product Overview

The L8050 is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers a high collector current capability of 0.8A. An NPN complement, the L8050, is also available. Pb-Free packages are offered, and an 'S-' prefix denotes devices suitable for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Type: NPN Silicon General Purpose Transistor
  • Package: SOT-23
  • Features: High current capacity in compact package (IC = 0.8A), Epitaxial planar type, Pb-Free Package available
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix devices)

Technical Specifications

CharacteristicSymbolMinTypMaxUnitNotes
MAXIMUM RATINGS
Collector-Emitter VoltageVCEO25V
Collector-Base VoltageVCBO40V
Emitter-Base VoltageVEBO5V
Collector Current-continuousIC800mAdc
THERMAL CHARACTERISTICS (FR-5 Board)
Total Device DissipationPD225mWTA=25C, Derate above 25C: 1.8 mW/C
Thermal Resistance,Junction to AmbientRJA556C/W
THERMAL CHARACTERISTICS (Alumina Substrate)
Total Device DissipationPD300mWTA=25C, Derate above 25C: 2.4 mW/C
Thermal Resistance,Junction to AmbientRJA417C/W
Junction and Storage TemperatureTj,Tstg-55+150C
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
Collector-Emitter Breakdown VoltageV(BR)CEO25VIC=1.0mA
Emitter-Base Breakdown VoltageV(BR)EBO5VIE=100
Collector-Base Breakdown VoltageV(BR)CBO40VIC=100
Collector Cutoff CurrentICBO150nAVCB=35V
Emitter Cutoff CurrentIEBO150nAVEB=4V
DC Current GainhFE100600IC=100mA,VCE=1V
Collector-Emitter Saturation VoltageVCE(sat)0.5VIC=800mA, IB=80mA

1809051326_LRC-L8050QLT1G_C49581.pdf

Related Products
quality High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant factory
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
quality Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits factory
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
quality Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions factory
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.