Low RDS ON 20V N Channel Enhancement Mode MOSFET LRC LN108N3T5G Suitable for Load Switches and DSCs
Key Attributes
Model Number:
LN108N3T5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
16pF
Pd - Power Dissipation:
715mW
Input Capacitance(Ciss):
135pF
Gate Charge(Qg):
2.2nC@4.5V
Mfr. Part #:
LN108N3T5G
Package:
SOT-883
Product Description
Product Overview
The LN108N3T5G is a 20V N-Channel Enhancement-Mode MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is compliant with RoHS requirements and Halogen Free. It is suitable for use in power management in notebooks, portable equipment, load switches, and DSCs.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model: LN108N3T5G
- Type: N-Channel Enhancement-Mode MOSFET
- Voltage Rating: 20V
- Material Compliance: RoHS requirements and Halogen Free
- Device Marking: LN108N3T5G
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| DrainSource Voltage | VDS | 20 | V | ||
| GatetoSource Voltage | VGS | 12 | V | ||
| Maximum Power Dissipation | PD | 175 | mW | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 715 | C/W | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | C | |
| Continuous Drain Current (TA = 25C) | ID | 2.5 | A | ||
| Pulsed Drain Current (Note 1) | IDM | 10 | A | ||
| Avalanche Current | IAS | 4 | A | ||
| Avalanche energy (L=0.1mH) | EAS | 0.8 | mJ | ||
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | V(BR)DSS | 20 | V | ||
| Zero Gate Voltage Drain Current (VDS=20V, VGS=0V) | IDSS | 1 | A | ||
| GateBody Leakage Current (VDS = 0 V, VGS = 12 V) | IGSS | 100 | nA | ||
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 0.45 | 0.65 | V | |
| Static DrainSource OnState Resistance (VGS = 4.5 V, ID = 1 A) | RDS(on) | 1.2 | m | ||
| Static DrainSource OnState Resistance (VGS = 2.5 V, ID = 1 A) | RDS(on) | 2.3 | m | ||
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 10 V) | Ciss | 110 | pF | ||
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 10 V) | Coss | 38 | pF | ||
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 10 V) | Crss | 3 | pF | ||
| Turn-On Delay Time | td(on) | 19 | ns | ||
| Rise Time | tr | 135 | ns | ||
| Turn-Off Delay Time | td(off) | 20 | ns | ||
| Fall Time | tf | 10 | ns | ||
| Forward Voltage (VGS = 0 V, IS = 1 A) | VSD | 1.0 | V | ||
| Total Gate Charge | Qg | 2.2 | nC | ||
| Gate-Source Charge | Qgs | 0.18 | nC | ||
| Gate-Drain Charge | Qgd | 0.6 | nC | ||
| Gate-Resistance | Rg | 7 |
| Ordering Information | Marking | Shipping |
|---|---|---|
| LN108N3T5G | LN108N3T5G | 10000/Tape&Reel |
2212131809_LRC-LN108N3T5G_C5273740.pdf
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